Highly textured, magnetic Fe(1+x) S nanorods grown on silicon

Abstract

Highly textured nanorods of iron sulfide Fe(1+x) S (0.1<x<0.2) were deposited on silicon by chemical vapor deposition using the single source precursor iron(III) N,N -diethyldithiocarbamate. The evaporation of this precursor in vacuum, followed by its thermal decomposition on silicon substrate, resulted in the growth of iron-rich iron sulfide semiconductor. Magnetic profiling of the iron-rich Fe(1+x) S rods grown on silicon revealed a Curie temperature of 360 °C; the in-plane:out-of-plane magnetic saturation ratio is 4:1, with a saturation magnetization of 19.7 emug. © 2007 American Institute of Physics.