Please use this identifier to cite or link to this item: https://doi.org/10.1088/0964-1726/14/5/018
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dc.titleGrowth and magnetic properties of NiMnGa thin films prepared by pulsed laser ablation
dc.contributor.authorZhu, T.J.
dc.contributor.authorLu, L.
dc.contributor.authorLai, M.O.
dc.contributor.authorDing, J.
dc.date.accessioned2014-04-24T10:16:29Z
dc.date.available2014-04-24T10:16:29Z
dc.date.issued2005-10-01
dc.identifier.citationZhu, T.J., Lu, L., Lai, M.O., Ding, J. (2005-10-01). Growth and magnetic properties of NiMnGa thin films prepared by pulsed laser ablation. Smart Materials and Structures 14 (5) : S293-S296. ScholarBank@NUS Repository. https://doi.org/10.1088/0964-1726/14/5/018
dc.identifier.issn09641726
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/51604
dc.description.abstractNi-Mn-Ga alloys have attracted increasing attention due to their large magnetic-field-induced stresses and the potential applications in sensors and actuators. In the present work, NiMnGa half-Heusler alloy films have been deposited on Si(100) substrates by the pulsed laser deposition technique at temperatures ranging from 450 to 650 °C. X-ray diffraction and atomic force microscopy observation show the phase structure and surface morphology of these films are different, and energy dispersive spectroscopy analysis shows compositions of the films remain nearly unchanged, independent of the deposition temperature. Vibrating sample magnetometer measurement indicates that good magnetic properties are obtained. All the films exhibit the same coercive field, about 250 Oe. The thermomagnetic curve shows that the Curie temperature of NiMnGa films is higher than room temperature, which is crucial for the room-temperature application. © 2005 IOP Publishing Ltd.
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentMECHANICAL ENGINEERING
dc.contributor.departmentMATERIALS SCIENCE
dc.description.doi10.1088/0964-1726/14/5/018
dc.description.sourcetitleSmart Materials and Structures
dc.description.volume14
dc.description.issue5
dc.description.pageS293-S296
dc.description.codenSMSTE
dc.identifier.isiut000233078300019
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