Please use this identifier to cite or link to this item: https://doi.org/10.1016/S0040-6090(02)00096-2
DC FieldValue
dc.titleOptical and structural properties of GaN materials and structures grown on Si by metalorganic chemical vapor deposition
dc.contributor.authorFeng, Z.C.
dc.contributor.authorZhang, X.
dc.contributor.authorChua, S.J.
dc.contributor.authorYang, T.R.
dc.contributor.authorDeng, J.C.
dc.contributor.authorXu, G.
dc.date.accessioned2014-04-24T08:36:58Z
dc.date.available2014-04-24T08:36:58Z
dc.date.issued2002-04-22
dc.identifier.citationFeng, Z.C., Zhang, X., Chua, S.J., Yang, T.R., Deng, J.C., Xu, G. (2002-04-22). Optical and structural properties of GaN materials and structures grown on Si by metalorganic chemical vapor deposition. Thin Solid Films 409 (1) : 15-22. ScholarBank@NUS Repository. https://doi.org/10.1016/S0040-6090(02)00096-2
dc.identifier.issn00406090
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/51226
dc.description.abstractGaN thin films, undoped, Si- and Mg-doped, and InGaN-GaN multiple quantum well (MQW) structures have been grown on Si (001) substrates with specially designed composite intermediate layers consisting of an ultra-thin amorphous Si layer and a GaN/AlGaN multilayered buffer by low pressure metalorganic chemical vapor deposition. Their optical and structural properties were studied by a variety of characterization techniques, including X-ray diffraction (XRD), Raman scattering, Fourier transform infrared reflectance, photoluminescence, scanning and transmission electron microscopy. Wurtzite GaN structure with the single crystalline grain size up to ∼2 μm is confirmed, and material properties are improved by adjusting the growth conditions and buffer layer structural design. © 2002 Elsevier Science B.V. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/S0040-6090(02)00096-2
dc.sourceScopus
dc.subjectGaN
dc.subjectMOCVD
dc.subjectOptical and structural properties
dc.typeConference Paper
dc.contributor.departmentMATERIALS SCIENCE
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1016/S0040-6090(02)00096-2
dc.description.sourcetitleThin Solid Films
dc.description.volume409
dc.description.issue1
dc.description.page15-22
dc.description.codenTHSFA
dc.identifier.isiut000175990100004
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

21
checked on May 11, 2022

WEB OF SCIENCETM
Citations

21
checked on May 11, 2022

Page view(s)

139
checked on May 12, 2022

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.