Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2362982
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dc.titleSynthesis and memory properties of a conjugated copolymer of fluorene and benzoate with chelated europium complex
dc.contributor.authorSong, Y.
dc.contributor.authorTan, Y.P.
dc.contributor.authorTeo, E.Y.H.
dc.contributor.authorZhu, C.
dc.contributor.authorChan, D.S.H.
dc.contributor.authorLing, Q.D.
dc.contributor.authorNeoh, K.G.
dc.contributor.authorKang, E.T.
dc.date.accessioned2014-04-24T07:25:12Z
dc.date.available2014-04-24T07:25:12Z
dc.date.issued2006
dc.identifier.citationSong, Y., Tan, Y.P., Teo, E.Y.H., Zhu, C., Chan, D.S.H., Ling, Q.D., Neoh, K.G., Kang, E.T. (2006). Synthesis and memory properties of a conjugated copolymer of fluorene and benzoate with chelated europium complex. Journal of Applied Physics 100 (8) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2362982
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/51055
dc.description.abstractA conjugated copolymer of diethylhexylfluorene and europium complex-chelated benzoate (PF8Eu) was synthesized. The device based on an Al/PF8Eu/indium-tin-oxide sandwich structure exhibited nonvolatile, write-once read-many-times (WORM) memory behavior. The fluorene moiety served as the backbone and electron donor, while the europium complex served as the electron acceptor. The as-fabricated device was in its low conductivity state. After applying a voltage of ∼3 V, the device underwent a transition to the high conductivity state, which could not be erased by a reverse bias. In the initial low conductivity state, the device showed a charge injection controlled current. At the high conductivity state, the current-voltage characteristics were dominated by a space-charge-limited current. The device had a switching time of ∼1 μs and an on/off current ratio as high as 106. No degradation in device performance was observed after 107 read cycles at a read voltage of 1 V under ambient conditions. The device also exhibited good stability under a constant 1 V stress. Thus, the device based on PF8Eu is potentially useful as a WORM memory. © 2006 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.2362982
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.contributor.departmentCHEMICAL & BIOMOLECULAR ENGINEERING
dc.description.doi10.1063/1.2362982
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume100
dc.description.issue8
dc.description.page-
dc.description.codenJAPIA
dc.identifier.isiut000241721900106
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