Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2003.817390
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dc.titleMonitoring Oxide Quality Using the Spread of the dC/dV Peak in Scanning Capacitance Microscopy Measurements
dc.contributor.authorChim, W.K.
dc.contributor.authorWong, K.M.
dc.contributor.authorYeow, Y.T.
dc.contributor.authorHong, Y.D.
dc.contributor.authorLei, Y.
dc.contributor.authorTeo, L.W.
dc.contributor.authorChoi, W.K.
dc.date.accessioned2014-04-24T07:23:07Z
dc.date.available2014-04-24T07:23:07Z
dc.date.issued2003-10
dc.identifier.citationChim, W.K., Wong, K.M., Yeow, Y.T., Hong, Y.D., Lei, Y., Teo, L.W., Choi, W.K. (2003-10). Monitoring Oxide Quality Using the Spread of the dC/dV Peak in Scanning Capacitance Microscopy Measurements. IEEE Electron Device Letters 24 (10) : 667-670. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2003.817390
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/50983
dc.description.abstractThis article proposes a method for evaluating the quality of the overlying oxide on samples used in scanning capacitance microscopy (SCM) dopant profile extraction. The method can also be used generally as a convenient in-process method for monitoring oxide quality directly after the oxidation process without prior metallization of the oxide-semiconductor sample. The spread of the differential capacitance characteristic (dC/dV versus V plot), characterized using its full width at half maximum (FWHM), was found to be strongly dependent on the interface trap density as a consequence of the stretch-out effect of interface traps on the capacitance-voltage (C-V) curve. Results show that the FWHM of the dC/dV characteristic is a sensitive monitor of oxide quality (in terms of interface trap density) as it is not complicated by localized oxide charging effects as in the case of the SCM probe tip voltage corresponding to maximum dC/dV. The magnitude of the dC/dV peak, at any given surface potential, was also found to be independent of the interface traps and only dependent on the substrate dopant concentration, which makes SCM dopant profile extraction possible.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2003.817390
dc.sourceScopus
dc.subjectInterface trap
dc.subjectOxide quality
dc.subjectScanning capacitance microscopy (SCM)
dc.subjectSemiconductor dopant extraction
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.contributor.departmentSINGAPORE-MIT ALLIANCE
dc.description.doi10.1109/LED.2003.817390
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume24
dc.description.issue10
dc.description.page667-670
dc.description.codenEDLED
dc.identifier.isiut000185567900019
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