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Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1569033
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dc.titleMechanisms of photoluminescence from silicon nanocrystals formed by pulsed-laser deposition in argon and oxygen ambient
dc.contributor.authorChen, X.Y.
dc.contributor.authorLu, Y.F.
dc.contributor.authorWu, Y.H.
dc.contributor.authorCho, B.J.
dc.contributor.authorLiu, M.H.
dc.contributor.authorDai, D.Y.
dc.contributor.authorSong, W.D.
dc.date.accessioned2014-04-24T07:22:53Z
dc.date.available2014-04-24T07:22:53Z
dc.date.issued2003-05-15
dc.identifier.citationChen, X.Y., Lu, Y.F., Wu, Y.H., Cho, B.J., Liu, M.H., Dai, D.Y., Song, W.D. (2003-05-15). Mechanisms of photoluminescence from silicon nanocrystals formed by pulsed-laser deposition in argon and oxygen ambient. Journal of Applied Physics 93 (10 1) : 6311-6319. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1569033
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/50975
dc.description.abstractThe different mechanisms of photoluminescence (PL) of silicon nanocrystals due to quantum confinement effect (QCE) and interface states were studied. Si nanocrystals were formed by pulsed-laser deposition in inert argon and reactive oxygen gas. The PL band at 2.55 eV showed vibronic structures with periodic spacing of 97±9 meV.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1569033
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.contributor.departmentDATA STORAGE INSTITUTE
dc.description.doi10.1063/1.1569033
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume93
dc.description.issue10 1
dc.description.page6311-6319
dc.description.codenJAPIA
dc.identifier.isiut000182789700071
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