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Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4819799
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dc.titleKlein tunneling in graphene systems under the influence of magnetic field
dc.contributor.authorBala Kumar, S.
dc.contributor.authorJalil, M.B.A.
dc.contributor.authorTan, S.G.
dc.date.accessioned2014-04-24T07:22:28Z
dc.date.available2014-04-24T07:22:28Z
dc.date.issued2013-08-28
dc.identifier.citationBala Kumar, S., Jalil, M.B.A., Tan, S.G. (2013-08-28). Klein tunneling in graphene systems under the influence of magnetic field. Journal of Applied Physics 114 (8) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4819799
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/50961
dc.description.abstractWe study Klein tunneling across a PN junction in monolayer graphene (MLG) and the AB-bilayer graphene (BLG) under the effect of a perpendicular magnetic-field (B-field). In the Klein tunneling process, normally incident electrons in MLG (BLG) are fully transmissive (reflective) upon hitting the junction barrier. When a finite B-field is applied, transmission of the normally incident electrons is suppressed in MLG over an energy range around the PN barrier height, effectively opening an energy gap. This suppression may be attributed to the magnetic deflection arising from Lorentz force, which shifts the transmission profile of the device in the transverse direction. © 2013 AIP Publishing LLC.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.4819799
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.4819799
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume114
dc.description.issue8
dc.description.page-
dc.description.codenJAPIA
dc.identifier.isiut000323911100093
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