Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.2833047
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dc.titleBilayer memory device based on a conjugated copolymer and a carbon nanotube/polyaniline composite
dc.contributor.authorLi, L.
dc.contributor.authorLing, Q.-D.
dc.contributor.authorZhu, C.
dc.contributor.authorChan, D.S.H.
dc.contributor.authorKang, E.-T.
dc.contributor.authorNeoh, K.-G.
dc.date.accessioned2014-04-24T07:19:47Z
dc.date.available2014-04-24T07:19:47Z
dc.date.issued2008
dc.identifier.citationLi, L., Ling, Q.-D., Zhu, C., Chan, D.S.H., Kang, E.-T., Neoh, K.-G. (2008). Bilayer memory device based on a conjugated copolymer and a carbon nanotube/polyaniline composite. Journal of the Electrochemical Society 155 (4) : H205-H209. ScholarBank@NUS Repository. https://doi.org/10.1149/1.2833047
dc.identifier.issn00134651
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/50869
dc.description.abstractA write-once read-many-times (WORM) memory device based on two layers of electroactive polymers sandwiched between an aluminum electrode and an indium-tin-oxide (ITO) electrode was fabricated. The electroactive polymer bilayer consisted of a conjugated copolymer film of 9,9-dihexylfluorene and Eu-complexed benzoate (P6FBEu) and a composite film of soluble self-aligned carbon nanotubes/polyaniline (PAN+CNT). At CNT contents above 1 wt %, the bilayer WORM memory device exhibited a low turn-on voltage of ∼2 V and a high ON/OFF current ratio of 105, in comparison to a turn-on voltage of 3.8 V and an ON/OFF current ratio of 103 for the corresponding CNT-free ITOPANP6FBEuAl bilayer device. The ON and OFF states endured up to 106 read cycles at a read voltage of 1 V. The introduction of the PAN+CNT composite film as an electroactive layer in the memory device has resulted in a reduction in switching voltage, as well as an increase in ON/OFF current ratio, compared to those of the CNT-free single-layer and bilayer devices. © 2008 The Electrochemical Society.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1149/1.2833047
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.contributor.departmentCHEMICAL & BIOMOLECULAR ENGINEERING
dc.description.doi10.1149/1.2833047
dc.description.sourcetitleJournal of the Electrochemical Society
dc.description.volume155
dc.description.issue4
dc.description.pageH205-H209
dc.description.codenJESOA
dc.identifier.isiut000253761700054
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