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Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/34888
DC FieldValue
dc.titleMethod for modulating the effective work function
dc.contributorINTERUNIVERSITAIR MICROELEKTRONICA CENTRUM ( IMEC)
dc.contributorNATIONAL UNIVERSITY OF SINGAPORE
dc.contributor.authorPANTISANO LUIGI
dc.contributor.authorSCHRAM TOM
dc.contributor.authorDE GENDT STEFAN
dc.date.accessioned2012-10-05T06:02:02Z
dc.date.available2012-10-05T06:02:02Z
dc.date.issued2007-12-05
dc.identifier.citationPANTISANO LUIGI,SCHRAM TOM,DE GENDT STEFAN (2007-12-05). Method for modulating the effective work function. ScholarBank@NUS Repository.
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/34888
dc.description.abstractA new MOSFET device is described comprising a metal gate electrode, a gate dielectric and an interfacial layer. A method for its manufacture is also provided and its applications.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/http://analytics.patsnap.com/patent_view/view?pn=EP1863072A1
dc.sourcePatSnap
dc.typePatent
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.identifier.isiutNOT_IN_WOS
dc.description.patentnoEP1863072A1
dc.description.patenttypePublished Application
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