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Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/34887
DC FieldValue
dc.titleLow work function metal alloy
dc.contributorINTERUNIVERSITAIR MICROELEKTRONICA CENTRUM ( IMEC)
dc.contributorNATIONAL UNIVERSITY OF SINGAPORE
dc.contributor.authorYU HONGYU
dc.contributor.authorJINGDE CHEN
dc.contributor.authorMINGFU LI
dc.contributor.authorKWONG DIM-LEE
dc.contributor.authorBIESEMANS SERGE
dc.date.accessioned2012-10-05T06:02:01Z
dc.date.available2012-10-05T06:02:01Z
dc.date.issued2007-06-13
dc.identifier.citationYU HONGYU,JINGDE CHEN,MINGFU LI,KWONG DIM-LEE,BIESEMANS SERGE (2007-06-13). Low work function metal alloy. ScholarBank@NUS Repository.
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/34887
dc.description.abstractThe present invention discloses low work function metals for use as gate electrode in nMOS devices. In particular an alloy of Nickel-Ytterbium (NiYb) is used to fully silicide (FUSI) a silicon gate. The resulting Nickel-Ytterbium-Silicon gate electrode has a work function of about 4.22eV.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/http://analytics.patsnap.com/patent_view/view?pn=EP1796151A1
dc.sourcePatSnap
dc.typePatent
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.identifier.isiutNOT_IN_WOS
dc.description.patentnoEP1796151A1
dc.description.patenttypePublished Application
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