Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/32795
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dc.titleMethod of zinc oxide film grown on the epitaxial lateral overgrowth gallium nitride template
dc.contributor.authorCHUA, SOON JIN
dc.contributor.authorZHOU, HAILONG
dc.contributor.authorLIN, JIANYI
dc.contributor.authorPAN, HUI
dc.date.accessioned2012-05-02T02:30:32Z
dc.date.available2012-05-02T02:30:32Z
dc.date.issued2011-05-31
dc.identifier.citationCHUA, SOON JIN,ZHOU, HAILONG,LIN, JIANYI,PAN, HUI (2011-05-31). Method of zinc oxide film grown on the epitaxial lateral overgrowth gallium nitride template. ScholarBank@NUS Repository.
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/32795
dc.description.abstractA growth method is proposed for high quality zinc oxide comprising the following steps: (1) growing a gallium nitride layer on a sapphire substrate around a temperature of 1000.degree. C.; (2) patterning a SiO.sub.2 mask into stripes oriented in the gallium nitride <1 100> or <11 20> direction; (3) growing epitaxial lateral overgrowth of (ELO) gallium nitride layers by controlling the facet planes via choosing the growth temperature and the reactor; (4) depositing zinc oxide films on facets ELO gallium nitride templates by chemical vapor deposition (CVD). Zinc oxide crystal of high quality with a reduced number of crystal defects can be grown on a gallium nitride template. This method can be used to fabricate zinc oxide films with low dislocation density lower than 10.sup.4/cm.sup.-2, which will find important applications in future electronic and optoelectronic devices.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/http://analytics.patsnap.com/patent_view/view?pn=US7951639
dc.sourcePatSnap
dc.typePatent
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.contributor.departmentPHYSICS
dc.identifier.isiutNOT_IN_WOS
dc.description.patentnoUS7951639
dc.description.patenttypeGranted Patent
dc.contributor.patentassigneeNATIONAL UNIVERSITY OF SINGAPORE
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