Please use this identifier to cite or link to this item:
https://scholarbank.nus.edu.sg/handle/10635/32637
DC Field | Value | |
---|---|---|
dc.title | Process for device using partial SOI | |
dc.contributor.author | JUN, CAI | |
dc.contributor.author | HONG, REN CHANG | |
dc.contributor.author | NAGARAJAN, RANGANATHAN | |
dc.contributor.author | BALASUBRAMANIAN, NARAYANAN | |
dc.contributor.author | LIANG, YUNG CHII | |
dc.date.accessioned | 2012-05-02T02:28:08Z | |
dc.date.available | 2012-05-02T02:28:08Z | |
dc.date.issued | 2003-04-22 | |
dc.identifier.citation | JUN, CAI,HONG, REN CHANG,NAGARAJAN, RANGANATHAN,BALASUBRAMANIAN, NARAYANAN,LIANG, YUNG CHII (2003-04-22). Process for device using partial SOI. ScholarBank@NUS Repository. | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/32637 | |
dc.description.abstract | A process for manufacturing a buried oxide layer for use in partial SOI structures is described. The process begins with the etching of deep trenches into a silicon body. For a preselected depth below the surface, the inner walls of the trenches are protected and oxidation of said walls is then effected until pinch-off occurs, both inside the trenches and in the material between trenches. The result is a continuous layer of wade whose size and shape are determined by the number and location of the trenches. Application of the process to the manufacture of a partial SOI RFLDMOS structure is also described together with performance data for the resulting device. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/http://analytics.patsnap.com/patent_view/view?pn=US6551937 | |
dc.source | PatSnap | |
dc.type | Patent | |
dc.contributor.department | MATERIALS SCIENCE | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.identifier.isiut | NOT_IN_WOS | |
dc.description.patentno | US6551937 | |
dc.description.patenttype | Granted Patent | |
dc.contributor.patentassignee | INSTITUTE OF MICROELECTRONICS (SINGAPORE, SG) | |
dc.contributor.patentassignee | NATIONAL UNIVERSITY OF SINGAPORE | |
Appears in Collections: | Staff Publications |
Show simple item record
Files in This Item:
File | Description | Size | Format | Access Settings | Version | |
---|---|---|---|---|---|---|
US6551937.PDF | 132.06 kB | Adobe PDF | OPEN | Published | View/Download |
Google ScholarTM
Check
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.