Please use this identifier to cite or link to this item:
Title: Method of fabricating group-III nitride-based semiconductor device
Authors: ZHANG, XIONG 
Issue Date: 25-Feb-2003
Citation: ZHANG, XIONG,CHUA, SOO JIN (2003-02-25). Method of fabricating group-III nitride-based semiconductor device. ScholarBank@NUS Repository.
Abstract: Disclosed are a group-III nitride-based semiconductor device that is grown over the surface of a composite intermediate layers consisting of a thin amorphous silicon film or any stress-relief film or a combination of them and at least one multi-layered buffer on silicon substrate, and a method of fabricating the same device. The intermediate layers that suppress the occurrence of crystal defects and propagation of misfit dislocations induced by the lattice mismatch between the epitaxial layer and substrate, ca n be grown on a part or the entirety of the surface of a silicon (001) or (111) substrate which can be single crystal or coated with a thin amorphous silicon film. Then at least one layer or multiple layers of high quality group-III nitride-based semiconductors are grown over the composite intermediate layers.
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
File Description SizeFormatAccess SettingsVersion 
US6524932.PDF139.26 kBAdobe PDF



Page view(s)

checked on Aug 19, 2019


checked on Aug 19, 2019

Google ScholarTM


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.