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Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/32545
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dc.titleRetractable cathodoluminescence detector with high ellipticity and high backscattered electron rejection performance for large area specimens
dc.contributor.authorPHANG, J. C. H.
dc.contributor.authorCBIM, W. K.
dc.contributor.authorCHAN, D. S. H.
dc.contributor.authorLIU, Y. Y.
dc.date.accessioned2012-05-02T02:26:48Z
dc.date.available2012-05-02T02:26:48Z
dc.date.issued1996-10-29
dc.identifier.citationPHANG, J. C. H.,CBIM, W. K.,CHAN, D. S. H.,LIU, Y. Y. (1996-10-29). Retractable cathodoluminescence detector with high ellipticity and high backscattered electron rejection performance for large area specimens. ScholarBank@NUS Repository.
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/32545
dc.description.abstractA cathodoluminescence detection system including a semi-ellipsoidal mirror of high ellipticity, with the mirror constructed of material of low atomic number to minimize interference caused by backscattered electrons. An emission radiation guide is mounted in line with the axis of rotation of the mirror to optimize CL radiation collection. Low detector height provides high spatial resolution in electron beam systems.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/http://analytics.patsnap.com/patent_view/view?pn=US5569920
dc.sourcePatSnap
dc.typePatent
dc.contributor.departmentELECTRICAL ENGINEERING
dc.identifier.isiutNOT_IN_WOS
dc.description.patentnoUS5569920
dc.description.patenttypeGranted Patent
dc.contributor.patentassigneeNATIONAL UNIVERSITY OF SINGAPORE
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