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Please use this identifier to cite or link to this item: https://doi.org/10.1007/s10832-006-9909-x
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dc.titleGrowth and characterization of UHV sputtering HfO2film by plasma oxidation and low temperature annealing
dc.contributor.authorLi, Q.
dc.contributor.authorOng, C.K.
dc.contributor.authorWang, S.J.
dc.contributor.authorWang, W.D.
dc.contributor.authorChi, D.Z.
dc.contributor.authorHuan, A.C.H.
dc.date.accessioned2011-11-29T06:11:28Z
dc.date.available2011-11-29T06:11:28Z
dc.date.issued2006
dc.identifier.citationLi, Q., Ong, C.K., Wang, S.J., Wang, W.D., Chi, D.Z., Huan, A.C.H. (2006). Growth and characterization of UHV sputtering HfO2film by plasma oxidation and low temperature annealing. Journal of Electroceramics 16 (4) : 517-521. ScholarBank@NUS Repository. https://doi.org/10.1007/s10832-006-9909-x
dc.identifier.issn13853449
dc.identifier.issn15738663
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/28959
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1007/s10832-006-9909-x
dc.sourceScopus
dc.subjectHigh-k dielectric thin films
dc.subjectMetal-oxide-semiconductor
dc.subjectRapid thermal annealing
dc.subjectUHV sputtering
dc.typeConference Paper
dc.contributor.departmentBIOCHEMISTRY
dc.contributor.departmentPHYSICS
dc.description.doi10.1007/s10832-006-9909-x
dc.description.sourcetitleJournal of Electroceramics
dc.description.volume16
dc.description.issue4
dc.description.page517-521
dc.description.codenJOELF
dc.identifier.isiut000241750700050
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