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Please use this identifier to cite or link to this item: https://doi.org/10.1088/0268-1242/21/5/017
DC FieldValue
dc.titleThermal stability study of Si cap/ultrathin Ge/Si and strained Si/Si1-xGex/Si nMOSFETs with HfO2gate dielectric
dc.contributor.authorYeo, C.C.
dc.contributor.authorCho, B.J.
dc.contributor.authorLee, M.H.
dc.contributor.authorLiu, C.W.
dc.contributor.authorChoi, K.J.
dc.contributor.authorLee, T.W.
dc.date.accessioned2011-08-16T07:52:51Z
dc.date.available2011-08-16T07:52:51Z
dc.date.issued2006
dc.identifier.citationYeo, C.C., Cho, B.J., Lee, M.H., Liu, C.W., Choi, K.J., Lee, T.W. (2006). Thermal stability study of Si cap/ultrathin Ge/Si and strained Si/Si1-xGex/Si nMOSFETs with HfO2gate dielectric. Semiconductor Science and Technology 21 (5) : 665-669. ScholarBank@NUS Repository. https://doi.org/10.1088/0268-1242/21/5/017
dc.identifier.issn02681242
dc.identifier.issn13616641
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/25762
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.contributor.departmentPAEDIATRICS
dc.description.doi10.1088/0268-1242/21/5/017
dc.description.sourcetitleSemiconductor Science and Technology
dc.description.volume21
dc.description.issue5
dc.description.page665-669
dc.identifier.isiut000237885000019
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