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Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/249170
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dc.titleBipolar resistive switching and synaptic characteristics modulation at sub-μA current level using novel Ni/SiOx/W cross-point structure
dc.contributor.authorSubhranu Samanta
dc.contributor.authorXiao Gong
dc.contributor.authorPanpan Zhang
dc.contributor.authorKaizhen Han
dc.contributor.authorXuanyao Fong
dc.date.accessioned2024-07-17T02:32:29Z
dc.date.available2024-07-17T02:32:29Z
dc.date.issued2019-10-15
dc.identifier.citationSubhranu Samanta, Xiao Gong, Panpan Zhang, Kaizhen Han, Xuanyao Fong (2019-10-15). Bipolar resistive switching and synaptic characteristics modulation at sub-μA current level using novel Ni/SiOx/W cross-point structure. ScholarBank@NUS Repository.
dc.identifier.urihttps://scholarbank.nus.edu.sg/handle/10635/249170
dc.typeArticle
dc.contributor.departmentELECTRICAL AND COMPUTER ENGINEERING
dc.published.statePublished
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