Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/249169
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dc.titlePhysical Insights Into the Mobility Enhancement in Amorphous InGaZnO Thin-Film Transistor by SiO2 Passivation Layer
dc.contributor.authorPanpan Zhang
dc.contributor.authorSubhranu Samanta
dc.contributor.authorXuanyao Fong
dc.date.accessioned2024-07-17T02:30:45Z
dc.date.available2024-07-17T02:30:45Z
dc.date.issued2020-05-06
dc.identifier.citationPanpan Zhang, Subhranu Samanta, Xuanyao Fong (2020-05-06). Physical Insights Into the Mobility Enhancement in Amorphous InGaZnO Thin-Film Transistor by SiO2 Passivation Layer. ScholarBank@NUS Repository.
dc.identifier.urihttps://scholarbank.nus.edu.sg/handle/10635/249169
dc.typeArticle
dc.contributor.departmentELECTRICAL AND COMPUTER ENGINEERING
dc.published.statePublished
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