Please use this identifier to cite or link to this item:
https://doi.org/10.1021/acsami.1c01720
DC Field | Value | |
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dc.title | Spin−Orbit Torque Switching of a High-Quality Perpendicularly Magnetized Ferrimagnetic Heusler Mn3Ge Film | |
dc.contributor.author | Lizhu Ren | |
dc.contributor.author | Liang Liu | |
dc.contributor.author | Xinyu Shu | |
dc.contributor.author | Weinan Lin | |
dc.contributor.author | Ping Yang | |
dc.contributor.author | Jingsheng Chen | |
dc.contributor.author | Kie Leong Teo | |
dc.contributor.editor | LIZHU, Ren | |
dc.date.accessioned | 2024-07-07T03:40:51Z | |
dc.date.available | 2024-07-07T03:40:51Z | |
dc.date.issued | 2021-04-06 | |
dc.identifier.citation | Lizhu Ren, Liang Liu, Xinyu Shu, Weinan Lin, Ping Yang, Jingsheng Chen, Kie Leong Teo (2021-04-06). Spin−Orbit Torque Switching of a High-Quality Perpendicularly Magnetized Ferrimagnetic Heusler Mn3Ge Film. ACS Applied Materials and Interfaces 13 (15) : 18294-18300. ScholarBank@NUS Repository. https://doi.org/10.1021/acsami.1c01720 | |
dc.identifier.issn | 19448244 | |
dc.identifier.uri | https://scholarbank.nus.edu.sg/handle/10635/249109 | |
dc.description.abstract | Current-induced spin−orbit torque (SOT) switching of magnetization has attracted great interest due to its potential application in magnetic memory devices, which offer low-energy consumption and high-speed writing. However, most of the SOT studies on perpendicularly magnetized anisotropy (PMA) magnets have been limited to heterostructures with interfacial PMA and poor thermal stability. Here, we experimentally demonstrate a SOT magnetization switching for a ferrimagnetic D022-Mn3Ge film with high bulk PMA and robust thermal stability factor under a critical current density of 6.6 × 1011 A m−2 through the spin Hall effect of an adjacent capping Pt and a buffer Cr layer. A large effective damping-like SOT efficiency of 2.37 mT/1010 A m−2 is determined using harmonic measurements in the structure. The effect of the double-spin source layers and the negative-exchange interaction of the ferrimagnet may explain the large SOT efficiency and the manifested magnetization switching of Mn3Ge. Our findings demonstrate that D022-Mn3Ge is a promising candidate for application in high-density SOT magnetic random-access memory devices. | |
dc.publisher | American Chemical Society | |
dc.subject | spin−orbit torque, current-induced magnetization switching, ferrimagnet film, high perpendicularly magnetized anisotropy | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL AND COMPUTER ENGINEERING | |
dc.contributor.department | MATERIALS SCIENCE AND ENGINEERING | |
dc.description.doi | 10.1021/acsami.1c01720 | |
dc.description.sourcetitle | ACS Applied Materials and Interfaces | |
dc.description.volume | 13 | |
dc.description.issue | 15 | |
dc.description.page | 18294-18300 | |
dc.published.state | Published | |
dc.grant.id | A18A6b0057 | |
dc.grant.fundingagency | A*STAR grant | |
Appears in Collections: | Elements Staff Publications |
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File | Description | Size | Format | Access Settings | Version | |
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Accepted Manuscript_Spin-Orbit Torque Switching of High Perpendicularly Magnetized Ferrimagnetic Heusler Mn3Ge Film.pdf | 1.12 MB | Adobe PDF | OPEN | Post-print | View/Download |
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