Please use this identifier to cite or link to this item: https://doi.org/10.1021/acsnano.3c01038
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dc.titleGate-Tunable Renormalization of Spin-Correlated Flat-Band States and Bandgap in a 2D Magnetic Insulator
dc.contributor.authorPin Lyu
dc.contributor.authorJoachim Sødequist
dc.contributor.authorXiaoyu Sheng
dc.contributor.authorZhizhan Qiu
dc.contributor.authorAnton Tadich
dc.contributor.authorQile Li
dc.contributor.authorMark T. Edmonds
dc.contributor.authorMeng Zhao
dc.contributor.authorJesús Redondo
dc.contributor.authorMartin Švec
dc.contributor.authorPeng Song
dc.contributor.authorThomas Olsen
dc.contributor.authorJiong Lu
dc.date.accessioned2024-07-03T04:25:09Z
dc.date.available2024-07-03T04:25:09Z
dc.date.issued2023-08-08
dc.identifier.citationPin Lyu, Joachim Sødequist, Xiaoyu Sheng, Zhizhan Qiu, Anton Tadich, Qile Li, Mark T. Edmonds, Meng Zhao, Jesús Redondo, Martin Švec, Peng Song, Thomas Olsen, Jiong Lu (2023-08-08). Gate-Tunable Renormalization of Spin-Correlated Flat-Band States and Bandgap in a 2D Magnetic Insulator. ACS Nano 17 (16) : 15441–15448. ScholarBank@NUS Repository. https://doi.org/10.1021/acsnano.3c01038
dc.identifier.issn19360851
dc.identifier.urihttps://scholarbank.nus.edu.sg/handle/10635/249058
dc.description.urihttps://pubs.acs.org/doi/10.1021/acsnano.3c01038
dc.publisherACS Publications
dc.typeArticle
dc.contributor.departmentCHEMISTRY
dc.contributor.departmentINSTITUTE FOR FUNCTIONAL INTELLIGENT MATERIALS
dc.contributor.departmentMATERIALS SCIENCE AND ENGINEERING
dc.description.doi10.1021/acsnano.3c01038
dc.description.sourcetitleACS Nano
dc.description.volume17
dc.description.issue16
dc.description.page15441–15448
dc.published.statePublished
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