Please use this identifier to cite or link to this item: https://doi.org/10.1002/adom.202202228
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dc.titleMid-Infrared Silicon-on-Lithium-Niobate Electro-Optic Modulators Toward Integrated Spectroscopic Sensing Systems
dc.contributor.authorXu, Siyu
dc.contributor.authorRen, Zhihao
dc.contributor.authorDong, Bowei
dc.contributor.authorZhou, Jingkai
dc.contributor.authorLiu, Weixin
dc.contributor.authorLee, Chengkuo
dc.date.accessioned2023-05-03T01:58:28Z
dc.date.available2023-05-03T01:58:28Z
dc.date.issued2022-12-09
dc.identifier.citationXu, Siyu, Ren, Zhihao, Dong, Bowei, Zhou, Jingkai, Liu, Weixin, Lee, Chengkuo (2022-12-09). Mid-Infrared Silicon-on-Lithium-Niobate Electro-Optic Modulators Toward Integrated Spectroscopic Sensing Systems. ADVANCED OPTICAL MATERIALS 11 (4). ScholarBank@NUS Repository. https://doi.org/10.1002/adom.202202228
dc.identifier.issn2195-1071
dc.identifier.urihttps://scholarbank.nus.edu.sg/handle/10635/239127
dc.description.abstractMid-infrared spectroscopy is an emerging technique in various applications such as molecule identification and label-free chemical sensing. Integrated photonic platforms have a promising potential to perform miniaturized spectroscopic sensing with the advantage of compact footprint, low cost, and low power consumption. As an essential building block for integrated photonics, on-chip phase shifter plays an important role in mid-infrared spectroscopic systems, enabling signal processing and spectrum analysis. However, the implementation of effective pure phase modulation in mid-infrared photonics remains challenging due to the unavoidable electroabsorption in the plasma dispersion effect at a long wavelength. Here, silicon photonic devices are built on lithium niobate substrates to simultaneously leverage the prominent electro-optic effect and circumvent the absorption originating from the oxide layer. In particular, a reliable transfer printing method is presented for flexibly integrating the monocrystalline silicon waveguides with foreign substrates. In the fabricated silicon-on-lithium-niobate platform, the electro-optic performance is exploited via Mach–Zehnder interferometer for operation in the mid-infrared regime. The modulator achieves half-wave voltage length product of 12.3 V∙cm at the wavelength of 3.78 µm, with a maximum extinction ratio of 25.2 dB. These results indicate the potential of the proposed technology for the implementation of integrated mid-infrared spectroscopic sensing systems.
dc.language.isoen
dc.publisherWILEY-V C H VERLAG GMBH
dc.sourceElements
dc.subjectScience & Technology
dc.subjectTechnology
dc.subjectPhysical Sciences
dc.subjectMaterials Science, Multidisciplinary
dc.subjectOptics
dc.subjectMaterials Science
dc.subjectelectro-optic modulators
dc.subjectlithium niobate
dc.subjectmid-infrared waveguide platform
dc.subjectpure phase modulation
dc.subjectsilicon photonics
dc.subjecttransfer printing
dc.subjectNITRIDE PHOTONIC CIRCUITS
dc.subjectMACH-ZEHNDER MODULATORS
dc.subjectTHIN-FILM
dc.subjectPHASE-SHIFTER
dc.subjectWAVE-GUIDES
dc.subjectMETAMATERIAL
dc.subjectMEMS
dc.subjectPROGRESS
dc.subjectPLATFORM
dc.subjectCHIP
dc.typeArticle
dc.date.updated2023-05-02T13:28:33Z
dc.contributor.departmentELECTRICAL AND COMPUTER ENGINEERING
dc.description.doi10.1002/adom.202202228
dc.description.sourcetitleADVANCED OPTICAL MATERIALS
dc.description.volume11
dc.description.issue4
dc.published.statePublished
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