Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/239054
Title: INTEGRATED InGaAs/InAlAs AVALANCHE PHOTODIODES AND SINGLE-PHOTON AVALANCHE DIODES ON SILICON SUBSTRATE FOR SHORT-WAVE INFRARED DETECTION
Authors: ZHANG JISHEN
ORCID iD:   orcid.org/0009-0007-1854-171X
Keywords: InGaAs, SPAD, Integration, SOI Platform
Issue Date: 3-Jan-2023
Citation: ZHANG JISHEN (2023-01-03). INTEGRATED InGaAs/InAlAs AVALANCHE PHOTODIODES AND SINGLE-PHOTON AVALANCHE DIODES ON SILICON SUBSTRATE FOR SHORT-WAVE INFRARED DETECTION. ScholarBank@NUS Repository.
Abstract: InGaAs-based avalanche photodiodes (APDs) and single-photon avalanche diodes (SPADs) are attracting more attention in various applications at short-wave infrared regimes, due to their high sensitivity, compact size, and moderate operation requirements. This thesis focus on the design and fabrication of the InGaAs/InAlAs SPADs on the InP substrate and the integration of the InGaAs/InAlAs APDs and SPADs on the SOI platform.
URI: https://scholarbank.nus.edu.sg/handle/10635/239054
Appears in Collections:Ph.D Theses (Open)

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