INTEGRATED InGaAs/InAlAs AVALANCHE PHOTODIODES AND SINGLE-PHOTON AVALANCHE DIODES ON SILICON SUBSTRATE FOR SHORT-WAVE INFRARED DETECTION

Abstract

InGaAs-based avalanche photodiodes (APDs) and single-photon avalanche diodes (SPADs) are attracting more attention in various applications at short-wave infrared regimes, due to their high sensitivity, compact size, and moderate operation requirements. This thesis focus on the design and fabrication of the InGaAs/InAlAs SPADs on the InP substrate and the integration of the InGaAs/InAlAs APDs and SPADs on the SOI platform.