Please use this identifier to cite or link to this item: https://doi.org/10.1126/sciadv.aba1830
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dc.titleElectrically controllable router of interlayer excitons
dc.contributor.authorLiu, Y.
dc.contributor.authorDini, K.
dc.contributor.authorTan, Q.
dc.contributor.authorLiew, T.
dc.contributor.authorNovoselov, K.S.
dc.contributor.authorGao, W.
dc.date.accessioned2021-08-27T02:35:27Z
dc.date.available2021-08-27T02:35:27Z
dc.date.issued2020
dc.identifier.citationLiu, Y., Dini, K., Tan, Q., Liew, T., Novoselov, K.S., Gao, W. (2020). Electrically controllable router of interlayer excitons. Science Advances 6 (41) : eaba1830. ScholarBank@NUS Repository. https://doi.org/10.1126/sciadv.aba1830
dc.identifier.issn2375-2548
dc.identifier.urihttps://scholarbank.nus.edu.sg/handle/10635/199690
dc.description.abstractOptoelectronic devices that allow rerouting, modulation, and detection of the optical signals would be extremely beneficial for telecommunication technology. One of the most promising platforms for these devices is excitonic devices, as they offer very efficient coupling to light. Of especial importance are those based on indirect excitons because of their long lifetime. Here, we demonstrate excitonic transistor and router based on bilayer WSe2. Because of their strong dipole moment, excitons in bilayer WSe2 can be controlled by transverse electric field. At the same time, unlike indirect excitons in artificially stacked heterostructures based on transition metal dichalcogenides, naturally stacked bilayers are much simpler in fabrication. © 2020 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).
dc.publisherAmerican Association for the Advancement of Science
dc.rightsAttribution-NonCommercial 4.0 International
dc.rights.urihttp://creativecommons.org/licenses/by-nc/4.0/
dc.sourceScopus OA2020
dc.typeArticle
dc.contributor.departmentMATERIALS SCIENCE AND ENGINEERING
dc.description.doi10.1126/sciadv.aba1830
dc.description.sourcetitleScience Advances
dc.description.volume6
dc.description.issue41
dc.description.pageeaba1830
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