Please use this identifier to cite or link to this item:
https://doi.org/10.1109/JEDS.2020.2967406
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dc.title | High-Frequency Characteristics of InGaP/GaAs Double Heterojunction Bipolar Transistor Epitaxially Grown on 200 mm Ge/Si Wafers | |
dc.contributor.author | Khai, L.W. | |
dc.contributor.author | Geok Ing, N. | |
dc.contributor.author | Fitzgerald, E.A. | |
dc.contributor.author | Soon Fatt, Y. | |
dc.contributor.author | Yue, W. | |
dc.contributor.author | Kwang Hong, L. | |
dc.contributor.author | Zhihong, L. | |
dc.contributor.author | Hanlin, X. | |
dc.contributor.author | Siau Ben, C. | |
dc.contributor.author | Eng Kian, K.L. | |
dc.contributor.author | Xing, Z. | |
dc.contributor.author | Tan, C.S. | |
dc.date.accessioned | 2021-08-19T02:17:26Z | |
dc.date.available | 2021-08-19T02:17:26Z | |
dc.date.issued | 2020 | |
dc.identifier.citation | Khai, L.W., Geok Ing, N., Fitzgerald, E.A., Soon Fatt, Y., Yue, W., Kwang Hong, L., Zhihong, L., Hanlin, X., Siau Ben, C., Eng Kian, K.L., Xing, Z., Tan, C.S. (2020). High-Frequency Characteristics of InGaP/GaAs Double Heterojunction Bipolar Transistor Epitaxially Grown on 200 mm Ge/Si Wafers. IEEE Journal of the Electron Devices Society 8 : 122-125. ScholarBank@NUS Repository. https://doi.org/10.1109/JEDS.2020.2967406 | |
dc.identifier.issn | 21686734 | |
dc.identifier.uri | https://scholarbank.nus.edu.sg/handle/10635/197878 | |
dc.description.abstract | N-p-n InGaP/GaAs double heterojunction bipolar transistor has been successfully grown on a 200 mm Ge/Si wafer using metalorganic chemical vapor deposition with low defect density of 107 cm ^{-2}. Non-gold metals of Ni/Ge/Al and Ti/Al are used to form the ohmic contact for small pieces device fabrication. Both direct-current (dc) and high-frequency characteristics of the device were measured. The device with emitter area of 6\times8 \mu {\text {m}} shows a dc gain of 55 at a collector current of I-{c} = 4 mA, with high collector-emitter breakdown voltage of 17 V. The high-frequency response with cutoff frequency ( f_{T} T) of 23 GHz and maximum available frequency ( f_{\text {max}} T) of 10 GHz can be achieved. These results demonstrate that InGaP/GaAs double heterojunction bipolar transistor grown on low defect density Ge/Si wafer has the potential for realizing III-V CMOS integrated platform for high-frequency applications. © 2013 IEEE. | |
dc.publisher | Institute of Electrical and Electronics Engineers Inc. | |
dc.source | Scopus OA2020 | |
dc.subject | bipolar transistors | |
dc.subject | III-V/Si integration | |
dc.subject | semiconductor growth | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL AND COMPUTER ENGINEERING | |
dc.description.doi | 10.1109/JEDS.2020.2967406 | |
dc.description.sourcetitle | IEEE Journal of the Electron Devices Society | |
dc.description.volume | 8 | |
dc.description.page | 122-125 | |
Appears in Collections: | Elements Staff Publications |
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