Please use this identifier to cite or link to this item:
https://doi.org/10.1016/j.actamat.2020.116516
DC Field | Value | |
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dc.title | A two-dimensional electron gas based on a 5s oxide with high room-temperature mobility and strain sensitivity | |
dc.contributor.author | Feng, Zexin | |
dc.contributor.author | Qin, Peixin | |
dc.contributor.author | Yang, Yali | |
dc.contributor.author | Yan, Han | |
dc.contributor.author | Guo, Huixin | |
dc.contributor.author | Wang, Xiaoning | |
dc.contributor.author | Zhou, Xiaorong | |
dc.contributor.author | Han, Yuyan | |
dc.contributor.author | Yi, Jiabao | |
dc.contributor.author | Qi, Dongchen | |
dc.contributor.author | Yu, Xiaojiang | |
dc.contributor.author | Breese, Mark BH | |
dc.contributor.author | Zhang, Xin | |
dc.contributor.author | Wu, Haojiang | |
dc.contributor.author | Chen, Hongyu | |
dc.contributor.author | Xiang, Hongjun | |
dc.contributor.author | Jiang, Chengbao | |
dc.contributor.author | Liu, Zhiqi | |
dc.date.accessioned | 2020-12-07T06:02:43Z | |
dc.date.available | 2020-12-07T06:02:43Z | |
dc.date.issued | 2021-02-01 | |
dc.identifier.citation | Feng, Zexin, Qin, Peixin, Yang, Yali, Yan, Han, Guo, Huixin, Wang, Xiaoning, Zhou, Xiaorong, Han, Yuyan, Yi, Jiabao, Qi, Dongchen, Yu, Xiaojiang, Breese, Mark BH, Zhang, Xin, Wu, Haojiang, Chen, Hongyu, Xiang, Hongjun, Jiang, Chengbao, Liu, Zhiqi (2021-02-01). A two-dimensional electron gas based on a 5s oxide with high room-temperature mobility and strain sensitivity. Acta Materialia 204 : 116516-116516. ScholarBank@NUS Repository. https://doi.org/10.1016/j.actamat.2020.116516 | |
dc.identifier.issn | 13596454 | |
dc.identifier.uri | https://scholarbank.nus.edu.sg/handle/10635/184561 | |
dc.description.abstract | The coupling of optical and electronic degrees of freedom together with quantum confinement in lowdimensional electron systems is particularly interesting for achieving exotic functionalities in strongly correlated oxide electronics. Recently, high room-temperature mobility has been achieved for a large bandgap transparent oxide – BaSnO3 upon extrinsic La or Sb doping, which has excited significant research attention. In this work, we report the realization of a two-dimensional electron gas (2DEG) on the surface of transparent BaSnO3 via oxygen vacancy creation, which exhibits a high carrier density of ~7.72 × 1014 cm−2 and a high room-temperature mobility of ~18 cm2·V−1·s−1. Such a 2DEG is rather sensitive to strain and a less than 0.1% in-plane biaxial compressive strain leads to a giant resistance enhancement of ~350% (more than 540 k/) at room temperature. Thus, this work creates a new path to exploring the physics of low-dimensional oxide electronics and devices applicable at room temperature. | |
dc.publisher | Elsevier BV | |
dc.source | Elements | |
dc.type | Article | |
dc.date.updated | 2020-12-06T03:29:19Z | |
dc.contributor.department | DEAN'S OFFICE (MEDICINE) | |
dc.contributor.department | CHEMISTRY | |
dc.contributor.department | FINANCE | |
dc.contributor.department | MATERIALS SCIENCE AND ENGINEERING | |
dc.contributor.department | PHYSICS | |
dc.contributor.department | NUS NANOSCIENCE & NANOTECH INITIATIVE | |
dc.contributor.department | SINGAPORE SYNCHROTRON LIGHT SOURCE | |
dc.description.doi | 10.1016/j.actamat.2020.116516 | |
dc.description.sourcetitle | Acta Materialia | |
dc.description.volume | 204 | |
dc.description.page | 116516-116516 | |
dc.published.state | Published | |
Appears in Collections: | Elements Staff Publications |
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