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Title: | STUDY ON ISFET WITH 2D HEXAGONAL-BORON NITRIDE AS SENSING FILM FOR PH SENSING APPLICATION | Authors: | WEI WEI | Keywords: | ISFET, Extended Gate, h-BN, Al<sub>2</sub>O<sub>3</sub>, pH Sensitivity, Drift | Issue Date: | 12-Apr-2019 | Citation: | WEI WEI (2019-04-12). STUDY ON ISFET WITH 2D HEXAGONAL-BORON NITRIDE AS SENSING FILM FOR PH SENSING APPLICATION. ScholarBank@NUS Repository. | Abstract: | This thesis focuses on study of pH sensitivity and drift of h-BN sensing film in ISFETs. The EGISFET with h-BN sensing film shows a pH sensitivity of 1-5 mV/pH and low drift value of ~0.50 mV/h. This proves high potential of using h-BN as a pH inert material in REFET. The effect of Al2O3 layer thickness on pH sensing performance of Al2O3/h-BN sensing film is then studied. The devices with 5 nm Al2O3 coated h-BN sensing film show pH sensitivities of larger than 50 mV/pH while at the same time exhibiting lower drift values than those with Al2O3 single sensing film. Finally, the EGISFETs with 2D MoS2 FET and Al2O3/h-BN sensing film were fabricated and studied in both single- and dual-gate configuration. The dual-gate configuration further improves the pH sensitivity to 166 V/pH. All these demonstrate high promising potentials of using h-BN in ISFETs for pH sensing applications. | URI: | https://scholarbank.nus.edu.sg/handle/10635/184314 |
Appears in Collections: | Ph.D Theses (Open) |
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