Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4943218
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dc.titleReduction of threading dislocation density in Ge/Si using a heavily As-doped Ge seed layer
dc.contributor.authorLee, K.H
dc.contributor.authorBao, S
dc.contributor.authorWang, B
dc.contributor.authorWang, C
dc.contributor.authorYoon, S.F
dc.contributor.authorMichel, J
dc.contributor.authorFitzgerald, E.A
dc.contributor.authorTan, C.S
dc.date.accessioned2020-11-10T08:01:11Z
dc.date.available2020-11-10T08:01:11Z
dc.date.issued2016
dc.identifier.citationLee, K.H, Bao, S, Wang, B, Wang, C, Yoon, S.F, Michel, J, Fitzgerald, E.A, Tan, C.S (2016). Reduction of threading dislocation density in Ge/Si using a heavily As-doped Ge seed layer. AIP Advances 6 (2) : 25028. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4943218
dc.identifier.issn21583226
dc.identifier.urihttps://scholarbank.nus.edu.sg/handle/10635/183350
dc.description.abstractHigh quality germanium (Ge) epitaxial film is grown directly on silicon (001) substrate with 6° off-cut using a heavily arsenic (As) doped Ge seed layer. The growth steps consists of (i) growth of a heavily As-doped Ge seed layer at low temperature (LT, at 400°C), (ii) Ge growth with As gradually reduced to zero at high temperature (HT, at 650°C), (iii) pure Ge growth at HT. This is followed by thermal cyclic annealing in hydrogen at temperature ranging from 600 to 850°C. Analytical characterization have shown that the Ge epitaxial film with a thickness of ∼1.5 μm experiences thermally induced tensile strain of 0.20% with a treading dislocation density (TDD) of mid 106/cm2 which is one order of magnitude lower than the control group without As doping and surface roughness of 0.37 nm. The reduction in TDD is due to the enhancement in velocity of dislocations in an As-doped Ge film. © 2016 Author(s).
dc.rightsAttribution 4.0 International
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/
dc.sourceUnpaywall 20201031
dc.subjectEpitaxial films
dc.subjectEpitaxial growth
dc.subjectSemiconductor doping
dc.subjectSurface roughness
dc.subjectTemperature
dc.subjectTensile strain
dc.subjectAnalytical characterization
dc.subjectDislocation densities
dc.subjectGermaniums (Ge)
dc.subjectHigh temperature
dc.subjectLow temperatures
dc.subjectThermal cyclic annealing
dc.subjectThermally induced
dc.subjectThreading dislocation densities
dc.subjectGermanium
dc.typeArticle
dc.contributor.departmentELECTRICAL AND COMPUTER ENGINEERING
dc.description.doi10.1063/1.4943218
dc.description.sourcetitleAIP Advances
dc.description.volume6
dc.description.issue2
dc.description.page25028
dc.published.statePublished
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