Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4944520
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dc.titleEffect of roughness on perpendicular magnetic anisotropy in (Co90Fe10/Pt)n superlattices
dc.contributor.authorQiu, J
dc.contributor.authorMeng, Z
dc.contributor.authorYang, Y
dc.contributor.authorYing, J.F
dc.contributor.authorYap, Q.J
dc.contributor.authorHan, G
dc.date.accessioned2020-11-10T07:58:25Z
dc.date.available2020-11-10T07:58:25Z
dc.date.issued2016
dc.identifier.citationQiu, J, Meng, Z, Yang, Y, Ying, J.F, Yap, Q.J, Han, G (2016). Effect of roughness on perpendicular magnetic anisotropy in (Co90Fe10/Pt)n superlattices. AIP Advances 6 (5) : 56123. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4944520
dc.identifier.issn21583226
dc.identifier.urihttps://scholarbank.nus.edu.sg/handle/10635/183338
dc.description.abstractSuperlattice [Co90Fe10(0.21)/Pt(0.23)]n (unit in nm) with the repeat cycles n ranging from 3 to 30 were studied. Both effective anisotropy (Keff) and PMA constant (KU) reached a maximum at n=8. When the 3 nm Pt underlayer was deposited at low energy condition, the Keff and KU of (CoFe/Pt)8 are 4.0 and 6.1 Merg/cc, respectively. On the other hand, the Keff and KU increased to 6.8 and 9.7 Merg/cc, respectively, when the Pt underlayer deposited at high energy condition. As the n increases, the surface roughness monotonously increases and d111 inside the superlattice layers increase and relax from bottom to top part. The interface roughness and relaxation in superlattice reduce the PMA considerably. @ 2016 Author(s).
dc.rightsAttribution 4.0 International
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/
dc.sourceUnpaywall 20201031
dc.subjectAnisotropy
dc.subjectPlatinum
dc.subjectSurface roughness
dc.subjectEffective anisotropy
dc.subjectEnergy condition
dc.subjectInterface roughness
dc.subjectLow-energy conditions
dc.subjectPerpendicular magnetic anisotropy
dc.subjectSuperlattice layers
dc.subjectUnderlayers
dc.subjectMagnetic anisotropy
dc.typeArticle
dc.contributor.departmentELECTRICAL AND COMPUTER ENGINEERING
dc.description.doi10.1063/1.4944520
dc.description.sourcetitleAIP Advances
dc.description.volume6
dc.description.issue5
dc.description.page56123
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