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Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4882172
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dc.titleGreen emission in carbon doped ZnO films
dc.contributor.authorTseng, L.T
dc.contributor.authorYi, J.B
dc.contributor.authorZhang, X.Y
dc.contributor.authorXing, G.Z
dc.contributor.authorFan, H.M
dc.contributor.authorHerng, T.S
dc.contributor.authorLuo, X
dc.contributor.authorIonescu, M
dc.contributor.authorDing, J
dc.contributor.authorLi, S
dc.date.accessioned2020-11-10T00:26:32Z
dc.date.available2020-11-10T00:26:32Z
dc.date.issued2014
dc.identifier.citationTseng, L.T, Yi, J.B, Zhang, X.Y, Xing, G.Z, Fan, H.M, Herng, T.S, Luo, X, Ionescu, M, Ding, J, Li, S (2014). Green emission in carbon doped ZnO films. AIP Advances 4 (6) : 67117. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4882172
dc.identifier.issn21583226
dc.identifier.urihttps://scholarbank.nus.edu.sg/handle/10635/183177
dc.description.abstractThe emission behavior of C-doped ZnO films, which were prepared by implantation of carbon into ZnO films, is investigated. Orange/red emission is observed for the films with the thickness of 60-100 nm. However, the film with thickness of 200 nm shows strong green emission. Further investigations by annealing bulk ZnO single crystals under different environments, i.e. Ar, Zn or C vapor, indicated that the complex defects based on Zn interstitials are responsible for the strong green emission. The existence of complex defects was confirmed by electron spin resonance (ESR) and low temperature photoluminescence (PL) measurement. © 2014 Author(s).
dc.rightsAttribution 4.0 International
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/
dc.sourceUnpaywall 20201031
dc.subjectCarbon
dc.subjectDefects
dc.subjectVapors
dc.subjectZinc
dc.subjectC-doped ZnO
dc.subjectComplex defects
dc.subjectDoped ZnO
dc.subjectEmission behavior
dc.subjectGreen emissions
dc.subjectInterstitials
dc.subjectLow temperature photoluminescence
dc.subjectZnO films
dc.subjectMetallic films
dc.typeArticle
dc.contributor.departmentCHEMISTRY
dc.contributor.departmentMATERIALS SCIENCE AND ENGINEERING
dc.description.doi10.1063/1.4882172
dc.description.sourcetitleAIP Advances
dc.description.volume4
dc.description.issue6
dc.description.page67117
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