DEEP LEVELS IN HIGH ENERGY HE IRRADIATED SILICON

Abstract

The objective of this study is to determine the characteristics of the defects induced by He+ ion inadiation in silicon. Transient capacitance is the primary measurement technique and Pulse-duration Dependence Capacitance Analysis is the major analysis method. Lately, radiation has been identified as the principal source of malfunction in the silicon mem01y devices causing both soft and hard enors. Thus alpha-particle-induced defects are a cause of primary concern for the in-use failure of these electronic applications of silicon devices , insofar as these defects can cause permanent deterioration of the electrical characteristics of these devices even after low to moderate radiation. The electronic and optical properties of a semiconductor are particularly sensitive to the presence of defects. The reason is that a defect can introduce one or more localized electronic states in the forbidden energy gap of a semiconductor.