Please use this identifier to cite or link to this item: https://doi.org/10.1038/srep15058
DC FieldValue
dc.titleDressed Gain from the Parametrically Amplified Four-Wave Mixing Process in an Atomic Vapor
dc.contributor.authorZhang, Z
dc.contributor.authorWen, F
dc.contributor.authorChe, J
dc.contributor.authorZhang, D
dc.contributor.authorLi, C
dc.contributor.authorZhang, Y
dc.contributor.authorXiao, M
dc.date.accessioned2020-10-26T08:56:14Z
dc.date.available2020-10-26T08:56:14Z
dc.date.issued2015
dc.identifier.citationZhang, Z, Wen, F, Che, J, Zhang, D, Li, C, Zhang, Y, Xiao, M (2015). Dressed Gain from the Parametrically Amplified Four-Wave Mixing Process in an Atomic Vapor. Scientific Reports 5 : 15058. ScholarBank@NUS Repository. https://doi.org/10.1038/srep15058
dc.identifier.issn2045-2322
dc.identifier.urihttps://scholarbank.nus.edu.sg/handle/10635/180427
dc.description.abstractWith a forward cone emitting from the strong pump laser in a thermal rubidium atomic vapor, we investigate the non-degenerate parametrically amplified four-wave mixing (PA-FWM) process with dressing effects in a three-level double-configuration both theoretically and experimentally. By seeding a weak probe field into the Stokes or anti-Stokes channel of the FWM, the gain processes are generated in the bright twin beams which are called conjugate and probe beams, respectively. However, the strong dressing effect of the pump beam will dramatically affect the gain factors both in the probe and conjugate channels, and can inevitably impose an influence on the quantum effects such as entangled degree and the quantum noise reduction between the two channels. We systematically investigate the intensity evolution of the dressed gain processes by manipulating the atomic density, the Rabi frequency and the frequency detuning. Such dressing effects are also visually evidenced by the observation of Autler-Townes splitting of the gain peaks. The investigation can contribute to the development of quantum information processing and quantum communications.
dc.publisherNature Publishing Group
dc.rightsAttribution 4.0 International
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/
dc.sourceUnpaywall 20201031
dc.typeArticle
dc.contributor.departmentELECTRICAL AND COMPUTER ENGINEERING
dc.description.doi10.1038/srep15058
dc.description.sourcetitleScientific Reports
dc.description.volume5
dc.description.page15058
dc.published.statepublished
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