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https://doi.org/10.1038/srep17810
DC Field | Value | |
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dc.title | Aluminium alloyed iron-silicide/silicon solar cells: A simple approach for low cost environmental-friendly photovoltaic technology | |
dc.contributor.author | Dalapati, G.K | |
dc.contributor.author | Masudy-Panah, S | |
dc.contributor.author | Kumar, A | |
dc.contributor.author | Tan, C.C | |
dc.contributor.author | Tan, H.R | |
dc.contributor.author | Chi, D | |
dc.date.accessioned | 2020-10-26T08:50:32Z | |
dc.date.available | 2020-10-26T08:50:32Z | |
dc.date.issued | 2015 | |
dc.identifier.citation | Dalapati, G.K, Masudy-Panah, S, Kumar, A, Tan, C.C, Tan, H.R, Chi, D (2015). Aluminium alloyed iron-silicide/silicon solar cells: A simple approach for low cost environmental-friendly photovoltaic technology. Scientific Reports 5 : 17810. ScholarBank@NUS Repository. https://doi.org/10.1038/srep17810 | |
dc.identifier.issn | 2045-2322 | |
dc.identifier.uri | https://scholarbank.nus.edu.sg/handle/10635/180407 | |
dc.description.abstract | This work demonstrates the fabrication of silicide/silicon based solar cell towards the development of low cost and environmental friendly photovoltaic technology. A heterostructure solar cells using metallic alpha phase (?-phase) aluminum alloyed iron silicide (FeSi(Al)) on n-type silicon is fabricated with an efficiency of 0.8%. The fabricated device has an open circuit voltage and fill-factor of 240 mV and 60%, respectively. Performance of the device was improved by about 7 fold to 5.1% through the interface engineering. The ?-phase FeSi(Al)/silicon solar cell devices have promising photovoltaic characteristic with an open circuit voltage, short-circuit current and a fill factor (FF) of 425 mV, 18.5 mA/cm 2, and 64%, respectively. The significant improvement of ?-phase FeSi(Al)/n-Si solar cells is due to the formation p+-n homojunction through the formation of re-grown crystalline silicon layer (?5-10 nm) at the silicide/silicon interface. Thickness of the regrown silicon layer is crucial for the silicide/silicon based photovoltaic devices. Performance of the ?-FeSi(Al)/n-Si solar cells significantly depends on the thickness of ?-FeSi(Al) layer and process temperature during the device fabrication. This study will open up new opportunities for the Si based photovoltaic technology using a simple, sustainable, and los cost method. | |
dc.publisher | Nature Publishing Group | |
dc.rights | Attribution 4.0 International | |
dc.rights.uri | http://creativecommons.org/licenses/by/4.0/ | |
dc.source | Unpaywall 20201031 | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL AND COMPUTER ENGINEERING | |
dc.description.doi | 10.1038/srep17810 | |
dc.description.sourcetitle | Scientific Reports | |
dc.description.volume | 5 | |
dc.description.page | 17810 | |
dc.published.state | published | |
Appears in Collections: | Elements Staff Publications |
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