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dc.titleAluminium alloyed iron-silicide/silicon solar cells: A simple approach for low cost environmental-friendly photovoltaic technology
dc.contributor.authorDalapati, G.K
dc.contributor.authorMasudy-Panah, S
dc.contributor.authorKumar, A
dc.contributor.authorTan, C.C
dc.contributor.authorTan, H.R
dc.contributor.authorChi, D
dc.identifier.citationDalapati, G.K, Masudy-Panah, S, Kumar, A, Tan, C.C, Tan, H.R, Chi, D (2015). Aluminium alloyed iron-silicide/silicon solar cells: A simple approach for low cost environmental-friendly photovoltaic technology. Scientific Reports 5 : 17810. ScholarBank@NUS Repository.
dc.description.abstractThis work demonstrates the fabrication of silicide/silicon based solar cell towards the development of low cost and environmental friendly photovoltaic technology. A heterostructure solar cells using metallic alpha phase (?-phase) aluminum alloyed iron silicide (FeSi(Al)) on n-type silicon is fabricated with an efficiency of 0.8%. The fabricated device has an open circuit voltage and fill-factor of 240 mV and 60%, respectively. Performance of the device was improved by about 7 fold to 5.1% through the interface engineering. The ?-phase FeSi(Al)/silicon solar cell devices have promising photovoltaic characteristic with an open circuit voltage, short-circuit current and a fill factor (FF) of 425 mV, 18.5 mA/cm 2, and 64%, respectively. The significant improvement of ?-phase FeSi(Al)/n-Si solar cells is due to the formation p+-n homojunction through the formation of re-grown crystalline silicon layer (?5-10 nm) at the silicide/silicon interface. Thickness of the regrown silicon layer is crucial for the silicide/silicon based photovoltaic devices. Performance of the ?-FeSi(Al)/n-Si solar cells significantly depends on the thickness of ?-FeSi(Al) layer and process temperature during the device fabrication. This study will open up new opportunities for the Si based photovoltaic technology using a simple, sustainable, and los cost method.
dc.publisherNature Publishing Group
dc.rightsAttribution 4.0 International
dc.sourceUnpaywall 20201031
dc.contributor.departmentDEPT OF ELECTRICAL & COMPUTER ENGG
dc.description.sourcetitleScientific Reports
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