Please use this identifier to cite or link to this item: https://doi.org/10.1116/1.4905939
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dc.titleEnhancement of Raman signals from low-k dielectrics with angle-resolved light scattering on nanostructure patterned Cu/low-k interconnects of IC devices
dc.contributor.authorHuang, M.Y.M
dc.contributor.authorLiu, B
dc.contributor.authorTan, P.K
dc.contributor.authorLam, J.C.K
dc.contributor.authorMai, Z
dc.date.accessioned2020-10-26T06:50:48Z
dc.date.available2020-10-26T06:50:48Z
dc.date.issued2015
dc.identifier.citationHuang, M.Y.M, Liu, B, Tan, P.K, Lam, J.C.K, Mai, Z (2015). Enhancement of Raman signals from low-k dielectrics with angle-resolved light scattering on nanostructure patterned Cu/low-k interconnects of IC devices. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 33 (2) : 20603. ScholarBank@NUS Repository. https://doi.org/10.1116/1.4905939
dc.identifier.issn0734-2101
dc.identifier.urihttps://scholarbank.nus.edu.sg/handle/10635/180084
dc.description.abstractThis letter reports the enhancement of Raman signals from low-k dielectric materials in the Cu/low-k interconnects of nanoscale integrated circuit (IC) devices. The Cu nanostructure pattern of the IC device acted as an active substrate for light scattering by the surface plasmon effect, enhancing the Raman signals observed from the low-k dielectric material of the device. The enhancement of the Raman signal of the low-k material was found to be strongly dependent on the incident angle of the incident laser light. A maximally enhanced Raman intensity was achieved when this angle was approximately 45° relative to the surface normal. Our findings are significant to the characterization of low-k materials and the monitoring of low-k reliability in leading edge semiconductor technologies with nanometer-scale structures. © 2015 Author(s).
dc.publisherAVS Science and Technology Society
dc.rightsAttribution 4.0 International
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/
dc.sourceUnpaywall 20201031
dc.subjectCharacterization
dc.subjectIntegrated circuit interconnects
dc.subjectIntegrated circuits
dc.subjectInterdiffusion (solids)
dc.subjectLight scattering
dc.subjectNanostructures
dc.subjectRaman spectroscopy
dc.subjectSemiconductor device manufacture
dc.subjectAngle-resolved light scattering
dc.subjectCu/low-k interconnects
dc.subjectIncident laser light
dc.subjectIntegrated circuit devices
dc.subjectLow-k dielectric materials
dc.subjectNanometer scale structure
dc.subjectSemiconductor technology
dc.subjectSurface plasmon effects
dc.subjectDielectric materials
dc.typeArticle
dc.contributor.departmentELECTRICAL AND COMPUTER ENGINEERING
dc.description.doi10.1116/1.4905939
dc.description.sourcetitleJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
dc.description.volume33
dc.description.issue2
dc.description.page20603
dc.published.statePublished
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