Please use this identifier to cite or link to this item:
https://doi.org/10.1186/s11671-016-1384-y
DC Field | Value | |
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dc.title | Strained GaAs/InGaAs Core-Shell Nanowires for Photovoltaic Applications | |
dc.contributor.author | Moratis, K | |
dc.contributor.author | Tan, S.L | |
dc.contributor.author | Germanis, S | |
dc.contributor.author | Katsidis, C | |
dc.contributor.author | Androulidaki, M | |
dc.contributor.author | Tsagaraki, K | |
dc.contributor.author | Hatzopoulos, Z | |
dc.contributor.author | Donatini, F | |
dc.contributor.author | Cibert, J | |
dc.contributor.author | Niquet, Y.-M | |
dc.contributor.author | Mariette, H | |
dc.contributor.author | Pelekanos, N.T | |
dc.date.accessioned | 2020-10-26T05:01:05Z | |
dc.date.available | 2020-10-26T05:01:05Z | |
dc.date.issued | 2016 | |
dc.identifier.citation | Moratis, K, Tan, S.L, Germanis, S, Katsidis, C, Androulidaki, M, Tsagaraki, K, Hatzopoulos, Z, Donatini, F, Cibert, J, Niquet, Y.-M, Mariette, H, Pelekanos, N.T (2016). Strained GaAs/InGaAs Core-Shell Nanowires for Photovoltaic Applications. Nanoscale Research Letters 11 (1) : 176. ScholarBank@NUS Repository. https://doi.org/10.1186/s11671-016-1384-y | |
dc.identifier.issn | 19317573 | |
dc.identifier.uri | https://scholarbank.nus.edu.sg/handle/10635/179895 | |
dc.description.abstract | We report on the successful growth of strained core-shell GaAs/InGaAs nanowires on Si (111) substrates by molecular beam epitaxy. The as-grown nanowires have a density in the order of 108 cm−2, length between 3 and 3.5 μm, and diameter between 60 and 160 nm, depending on the shell growth duration. By applying a range of characterization techniques, we conclude that the In incorporation in the nanowires is on average significantly smaller than what is nominally expected based on two-dimensional growth calibrations and exhibits a gradient along the nanowire axis. On the other hand, the observation of sharp dot-like emission features in the micro-photoluminescence spectra of single nanowires in the 900–1000-nm spectral range highlights the co-existence of In-rich enclosures with In content locally exceeding 30 %. © 2016, Moratis et al. | |
dc.rights | Attribution 4.0 International | |
dc.rights.uri | http://creativecommons.org/licenses/by/4.0/ | |
dc.source | Unpaywall 20201031 | |
dc.subject | Cathodoluminescence | |
dc.subject | Epitaxial growth | |
dc.subject | Gallium arsenide | |
dc.subject | Indium | |
dc.subject | Molecular beam epitaxy | |
dc.subject | Nanowires | |
dc.subject | Photoluminescence | |
dc.subject | Semiconducting gallium | |
dc.subject | Characterization techniques | |
dc.subject | Core-shell nanowires | |
dc.subject | GaAs | |
dc.subject | Micro photoluminescence | |
dc.subject | Micro-Raman | |
dc.subject | Photovoltaic applications | |
dc.subject | Si(111) substrate | |
dc.subject | Two-dimensional growth | |
dc.subject | Shells (structures) | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL AND COMPUTER ENGINEERING | |
dc.description.doi | 10.1186/s11671-016-1384-y | |
dc.description.sourcetitle | Nanoscale Research Letters | |
dc.description.volume | 11 | |
dc.description.issue | 1 | |
dc.description.page | 176 | |
dc.published.state | Published | |
Appears in Collections: | Staff Publications Elements |
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