PULSED LASER DEPOSITION OF TITANIUM NITRIDE THIN FILM

Abstract

This thesis is concerned with the synthesis of titanium nitride (TiN) thin films by pulsed laser ablation. Many methods have been employed for growing TiN thin film, which is the material that has been widely used as diffusion barrier in microelectronics contact, coatings for wavelength-selective transparent optical and high-speed tools. Pulsed laser deposition (PLD) is a new and effective method. In this thesis, the influence of substrate temperatures (ranging from room temperature to 600 °C) on the crystallinity, morphology, stoichiometry, and mechanical properties of the TiN thin films deposited by PLD in vacuum was investigated. 600 °C was found to be the optimal temperature for the pulsed laser ablation of TiN ceramic target to grow TiN thin films. At this temperature, the thin film is crystallized in nanoscale structures, with good mechanical properties such as high hardness and modulus. Obvious improvements of the morphology, crystallinity, hardness and stiffness of the TiN film resulted from the elevated substrate temperature.