Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.solmat.2020.110758
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dc.titleEngineering aluminum oxide/polysilicon hole selective passivated contacts for high efficiency solar cells
dc.contributor.authorKaur, G
dc.contributor.authorXin, Z
dc.contributor.authorSridharan, R
dc.contributor.authorDanner, A
dc.contributor.authorStangl, R
dc.date.accessioned2020-09-21T11:18:11Z
dc.date.available2020-09-21T11:18:11Z
dc.date.issued2020-12-01
dc.identifier.citationKaur, G, Xin, Z, Sridharan, R, Danner, A, Stangl, R (2020-12-01). Engineering aluminum oxide/polysilicon hole selective passivated contacts for high efficiency solar cells. Solar Energy Materials and Solar Cells 218 : 110758-110758. ScholarBank@NUS Repository. https://doi.org/10.1016/j.solmat.2020.110758
dc.identifier.issn09270248
dc.identifier.urihttps://scholarbank.nus.edu.sg/handle/10635/176420
dc.description.abstract© 2020 Elsevier B.V. Tunnel layer passivated contact technology is already highly efficient in case of selective electron extraction but not as efficient in case of selective hole extraction. Thus far, SiOx/p+-poly-Si contacts have resulted only in efficiencies above ~20.1% for rear-side deployed hole selective contacts. We investigate if hole extraction selectivity can be further improved by substituting the ‘conventionally’ used SiOx tunnel layer exhibiting moderate or even high positive fixed charge density by AlOx tunnel layers, exhibiting high negative fixed charge density. The merits of using atomic layer deposited ultrathin AlOx tunnel layers are investigated and compared with wet chemically formed SiOx tunnel layers to form AlOx/p+-poly-Si and SiOx/p+-poly-Si hole selective passivated contacts respectively. The AlOx thickness (0.13–2 nm) and its thermal budget including annealing time, temperature and ambient were varied. The quality of the resulting AlOx/p+-poly-Si passivated contacts was determined by measuring the recombination current density (Jc) and the effective contact resistivity (ρc). Finally, using the measured values of Jc and ρc, we predict the efficiency potential and selectivity of the passivated contact using Brendel's model. We show that for 425 °C annealed AlOx samples prior to poly-Si capping, there is an improvement in passivation quality due to the high negative AlOx interface charge, which forms only for “thick” tunnel layers (≥1.5 nm). However, after high-temperature poly-Si capping, enhanced boron in-diffusion and charge compensation are degrading the overall passivation quality of “thick” AlOx/p+-poly-Si passivated contacts. The best AlOx/p+-poly-Si passivated contacts use ultra-thin AlOx tunnel layers (efficiency potential of 26.9%), which is only marginally better than the SiOx reference samples, but still improves hole selectivity.
dc.publisherElsevier BV
dc.sourceElements
dc.typeArticle
dc.date.updated2020-09-21T09:32:51Z
dc.contributor.departmentDEPT OF ELECTRICAL & COMPUTER ENGG
dc.contributor.departmentSOLAR ENERGY RESEARCH INST OF S'PORE
dc.description.doi10.1016/j.solmat.2020.110758
dc.description.sourcetitleSolar Energy Materials and Solar Cells
dc.description.volume218
dc.description.page110758-110758
dc.published.statePublished
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