Please use this identifier to cite or link to this item:
https://doi.org/10.1088/1367-2630/16/11/115008
DC Field | Value | |
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dc.title | Hydrogenated ultra-thin tin films predicted as two-dimensional topological insulators | |
dc.contributor.author | Chou, B.-H | |
dc.contributor.author | Huang, Z.-Q | |
dc.contributor.author | Hsu, C.-H | |
dc.contributor.author | Chuang, F.-C | |
dc.contributor.author | Liu, Y.-T | |
dc.contributor.author | Lin, H | |
dc.contributor.author | Bansil, A | |
dc.date.accessioned | 2020-09-09T07:22:20Z | |
dc.date.available | 2020-09-09T07:22:20Z | |
dc.date.issued | 2014 | |
dc.identifier.citation | Chou, B.-H, Huang, Z.-Q, Hsu, C.-H, Chuang, F.-C, Liu, Y.-T, Lin, H, Bansil, A (2014). Hydrogenated ultra-thin tin films predicted as two-dimensional topological insulators. New Journal of Physics 16 : 115008. ScholarBank@NUS Repository. https://doi.org/10.1088/1367-2630/16/11/115008 | |
dc.identifier.issn | 1367-2630 | |
dc.identifier.uri | https://scholarbank.nus.edu.sg/handle/10635/175300 | |
dc.description.abstract | Using thickness-dependent first-principles electronic structure calculations, we predict that hydrogenated ultra-thin films of tin harbor a new class of two-dimensional (2D) topological insulators (TIs). A single bilayer (BL) tin film assumes a 2D-TI phase, but it transforms into a trivial insulator after hydrogenation. In contrast, tin films with 2 and 3 BLs are found to be trivial insulators, but hydrogenation of 2 to 4 BL films results in a non-trivial TI phase. For 1 to 3 BLs, H-passivation converts the films from being metallic to insulating. Moreover, we examined iodine-terminated tin films up to 3 BLs, and found these to be non-trivial, with the films becoming semi-metallic beyond 1 BL. In particular, the large band gap of 340 meV in an iodine-terminated tin BL is not sustained in the iodine-terminated 2 BL and 3 BL tin films. © 2014 IOP Publishing Ltd and Deutsche Physikalische Gesellschaft. | |
dc.publisher | Institute of Physics Publishing | |
dc.source | Unpaywall 20200831 | |
dc.subject | Calculations | |
dc.subject | Electric insulators | |
dc.subject | Electronic structure | |
dc.subject | Energy gap | |
dc.subject | Hydrogenation | |
dc.subject | Iodine | |
dc.subject | Metallic films | |
dc.subject | Quantum Hall effect | |
dc.subject | Spin Hall effect | |
dc.subject | Tin | |
dc.subject | Ultrathin films | |
dc.subject | First-principles calculation | |
dc.subject | Quantum Spin hall effect | |
dc.subject | TiN thin films | |
dc.subject | Topological insulators | |
dc.subject | Topological phase | |
dc.subject | Thin films | |
dc.type | Article | |
dc.contributor.department | PHYSICS | |
dc.contributor.department | CENTRE FOR ADVANCED 2D MATERIALS | |
dc.description.doi | 10.1088/1367-2630/16/11/115008 | |
dc.description.sourcetitle | New Journal of Physics | |
dc.description.volume | 16 | |
dc.description.page | 115008 | |
dc.published.state | Published | |
Appears in Collections: | Staff Publications Elements |
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