Please use this identifier to cite or link to this item: https://doi.org/10.1038/srep45307
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dc.titlePhase-transfer induced room temperature ferromagnetic behavior in 1T@2H-MoSe 2 nanosheets
dc.contributor.authorXia B.
dc.contributor.authorWang T.
dc.contributor.authorXiao W.
dc.contributor.authorZhang R.
dc.contributor.authorLiu P.
dc.contributor.authorDing J.
dc.contributor.authorGao D.
dc.contributor.authorXue D.
dc.date.accessioned2020-09-09T05:07:28Z
dc.date.available2020-09-09T05:07:28Z
dc.date.issued2017
dc.identifier.citationXia B., Wang T., Xiao W., Zhang R., Liu P., Ding J., Gao D., Xue D. (2017). Phase-transfer induced room temperature ferromagnetic behavior in 1T@2H-MoSe 2 nanosheets. Scientific Reports 7 : 45307. ScholarBank@NUS Repository. https://doi.org/10.1038/srep45307
dc.identifier.issn20452322
dc.identifier.urihttps://scholarbank.nus.edu.sg/handle/10635/175218
dc.description.abstractManipulating electronic and magnetic properties of two-dimensional transitional-metal dichalcogenides has raised a lot of attention recently. Herein we report the synthesis and ferromagnetic properties of phase-transfer induced room temperature ferromagnetic behavior in 1 T@2H-MoSe 2 nanosheets. Experimental results indicate the saturated magnetization of the 1 T@2H-MoSe2 compound increases first and then decreases as the increasing of 1 T-MoSe2 phase, where 65.58% 1 T-MoSe2 phase incorporation in 2H-MoSe2 could enhance the saturated magnetization from 0.32 memu/g to 8.36 memu/g. Besides, obvious magnetoresistance behaviors are observed in these samples, revealing their potential applications in future spintronics.
dc.sourceUnpaywall 20200831
dc.typeArticle
dc.contributor.departmentMATERIALS SCIENCE AND ENGINEERING
dc.description.doi10.1038/srep45307
dc.description.sourcetitleScientific Reports
dc.description.volume7
dc.description.page45307
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