Please use this identifier to cite or link to this item: https://doi.org/10.1038/lsa.2014.66
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dc.titleDesign and fabrication of broadband ultralow reflectivity black Si surfaces by laser micro/nanoprocessing
dc.contributor.authorYang J.
dc.contributor.authorLuo F.
dc.contributor.authorKao T.S.
dc.contributor.authorLi X.
dc.contributor.authorHo G.W.
dc.contributor.authorTeng J., Luo X.
dc.contributor.authorHong M.
dc.date.accessioned2020-09-08T02:16:39Z
dc.date.available2020-09-08T02:16:39Z
dc.date.issued2014
dc.identifier.citationYang J., Luo F., Kao T.S., Li X., Ho G.W., Teng J., Luo X., Hong M. (2014). Design and fabrication of broadband ultralow reflectivity black Si surfaces by laser micro/nanoprocessing. Light: Science and Applications 3 : e185. ScholarBank@NUS Repository. https://doi.org/10.1038/lsa.2014.66
dc.identifier.issn2047-7538
dc.identifier.urihttps://scholarbank.nus.edu.sg/handle/10635/174580
dc.description.abstractLight collection efficiency is an important factor that affects the performance of many optical and optoelectronic devices. In these devices, the high reflectivity of interfaces can hinder efficient light collection. To minimize unwanted reflection, anti-reflection surfaces can be fabricated by micro/nanopatterning. In this paper, we investigate the fabrication of broadband anti-reflection Si surfaces by laser micro/nanoprocessing. Laser direct writing is applied to create microstructures on Si surfaces that reduce light reflection by light trapping. In addition, laser interference lithography and metal assisted chemical etching are adopted to fabricate the Si nanowire arrays. The anti-reflection performance is greatly improved by the high aspect ratio subwavelength structures, which create gradients of refractive index from the ambient air to the substrate. Furthermore, by decoration of the Si nanowires with metallic nanoparticles, surface plasmon resonance can be used to further control the broadband reflections, reducing the reflection to below 1.0% across from 300 to 1200 nm. An average reflection of 0.8% is achieved. © 2014 CIOMP.
dc.sourceUnpaywall 20200831
dc.subjectAspect ratio
dc.subjectFabrication
dc.subjectLight reflection
dc.subjectLithography
dc.subjectNanowires
dc.subjectOptical waveguides
dc.subjectOptoelectronic devices
dc.subjectPlasmons
dc.subjectReflection
dc.subjectRefractive index
dc.subjectSurface plasmon resonance
dc.subjectAnti reflection
dc.subjectbroadband
dc.subjectBroadband anti reflections
dc.subjectLaser interference lithography
dc.subjectLight collection efficiency
dc.subjectMetal-assisted chemical etching
dc.subjectSub-wavelength structures
dc.subjectSurface plasmons
dc.subjectBroadband
dc.subjectSilicon
dc.typeArticle
dc.contributor.departmentELECTRICAL AND COMPUTER ENGINEERING
dc.description.doi10.1038/lsa.2014.66
dc.description.sourcetitleLight: Science and Applications
dc.description.volume3
dc.description.pagee185
dc.published.statePublished
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