Please use this identifier to cite or link to this item: https://doi.org/10.1039/c6tc02601j
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dc.titleDiacenopentalene dicarboximides as new n-type organic semiconductors for field-effect transistors
dc.contributor.authorDai, G
dc.contributor.authorChang, J
dc.contributor.authorJing, L
dc.contributor.authorChi, C
dc.date.accessioned2020-09-02T07:03:53Z
dc.date.available2020-09-02T07:03:53Z
dc.date.issued2016
dc.identifier.citationDai, G, Chang, J, Jing, L, Chi, C (2016). Diacenopentalene dicarboximides as new n-type organic semiconductors for field-effect transistors. Journal of Materials Chemistry C 4 (37) : 8758-8764. ScholarBank@NUS Repository. https://doi.org/10.1039/c6tc02601j
dc.identifier.issn20507534
dc.identifier.urihttps://scholarbank.nus.edu.sg/handle/10635/174041
dc.description.abstractN,N?-Dihexyl-dibenzopentalene dicarboximide (DBPDI) and N,N?-dioctyl-dinaphthopentalene dicarboximide (DNPDI) were successfully synthesized as new n-type semiconducting materials. They have good solubility in common organic solvents. DBPDI and DNPDI are thermally stable, with decomposition temperatures at 419 and 460 °C, respectively, based on thermogravimetric analysis, and melt at 354 and 387 °C as measured by differential scanning calorimetry. Their optical and electrochemical properties were studied by UV-vis absorption and cyclic voltammetry measurements. Time-dependent density functional theory calculations (TDDFT) were used to explain their unique electronic absorption spectra. DBPDI and DNPDI have relatively low-lying LUMO energy levels at -3.76 eV and -3.45 eV and HOMO energy levels at -5.84 eV and -5.72 eV, respectively. Their application in organic field-effect transistors (FETs) was investigated. Both DBPDI and DNPDI showed n-type field-effect transistor behavior. The DBPDI device obtained by solution-processing technique displayed an average electron mobility of up to 0.06 cm2 V-1 s-1 with an Ion/Ioff ratio of 2.9 × 106. © 2016 The Royal Society of Chemistry.
dc.sourceUnpaywall 20200831
dc.subjectCyclic voltammetry
dc.subjectDensity functional theory
dc.subjectDifferential scanning calorimetry
dc.subjectOrganic field effect transistors
dc.subjectThermogravimetric analysis
dc.subjectTransistors
dc.subjectDecomposition temperature
dc.subjectElectronic absorption spectra
dc.subjectN-type organic semiconductor
dc.subjectSemiconducting materials
dc.subjectSolution-processing
dc.subjectTime dependent density functional theory calculations
dc.subjectUV-vis absorptions
dc.subjectVoltammetry measurements
dc.subjectField effect transistors
dc.typeArticle
dc.contributor.departmentMATERIALS SCIENCE AND ENGINEERING
dc.contributor.departmentCHEMISTRY
dc.description.doi10.1039/c6tc02601j
dc.description.sourcetitleJournal of Materials Chemistry C
dc.description.volume4
dc.description.issue37
dc.description.page8758-8764
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