Please use this identifier to cite or link to this item: https://doi.org/10.1038/srep18993
DC FieldValue
dc.titleTwo-dimensional Topological Crystalline Insulator Phase in Sb/Bi Planar Honeycomb with Tunable Dirac Gap
dc.contributor.authorHsu, C.-H
dc.contributor.authorHuang, Z.-Q
dc.contributor.authorCrisostomo, C.P
dc.contributor.authorYao, L.-Z
dc.contributor.authorChuang, F.-C
dc.contributor.authorLiu, Y.-T
dc.contributor.authorWang, B
dc.contributor.authorHsu, C.-H
dc.contributor.authorLee, C.-C
dc.contributor.authorLin, H
dc.contributor.authorBansil, A
dc.date.accessioned2020-09-02T07:01:34Z
dc.date.available2020-09-02T07:01:34Z
dc.date.issued2016
dc.identifier.citationHsu, C.-H, Huang, Z.-Q, Crisostomo, C.P, Yao, L.-Z, Chuang, F.-C, Liu, Y.-T, Wang, B, Hsu, C.-H, Lee, C.-C, Lin, H, Bansil, A (2016). Two-dimensional Topological Crystalline Insulator Phase in Sb/Bi Planar Honeycomb with Tunable Dirac Gap. Scientific Reports 6 : 18993. ScholarBank@NUS Repository. https://doi.org/10.1038/srep18993
dc.identifier.issn20452322
dc.identifier.urihttps://scholarbank.nus.edu.sg/handle/10635/174033
dc.description.abstractWe predict planar Sb/Bi honeycomb to harbor a two-dimensional (2D) topological crystalline insulator (TCI) phase based on first-principles computations. Although buckled Sb and Bi honeycombs support 2D topological insulator (TI) phases, their structure becomes planar under tensile strain. The planar Sb/Bi honeycomb structure restores the mirror symmetry, and is shown to exhibit non-zero mirror Chern numbers, indicating that the system can host topologically protected edge states. Our computations show that the electronic spectrum of a planar Sb/Bi nanoribbon with armchair or zigzag edges contains two Dirac cones within the band gap and an even number of edge bands crossing the Fermi level. Lattice constant of the planar Sb honeycomb is found to nearly match that of hexagonal-BN. The Sb nanoribbon on hexagonal-BN exhibits gapped edge states, which we show to be tunable by an out-of-the-plane electric field, providing controllable gating of edge state important for device applications. © 2016, Nature Publishing Group. All rights reserved.
dc.sourceUnpaywall 20200831
dc.typeArticle
dc.contributor.departmentDEPT OF ELECTRICAL & COMPUTER ENGG
dc.contributor.departmentCENTRE FOR ADVANCED 2D MATERIALS
dc.contributor.departmentDEPT OF PHYSICS
dc.description.doi10.1038/srep18993
dc.description.sourcetitleScientific Reports
dc.description.volume6
dc.description.page18993
Appears in Collections:Elements
Staff Publications

Show simple item record
Files in This Item:
File Description SizeFormatAccess SettingsVersion 
10_1038_srep18993.pdf4.61 MBAdobe PDF

OPEN

NoneView/Download

SCOPUSTM   
Citations

18
checked on Sep 22, 2022

Page view(s)

165
checked on Sep 22, 2022

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.