Study of Laterally Stacked Nanostructures Using an Organic Semiconducting Channel Fabricated by Trench Isolation Technique

Please use this identifier to cite or link to this item: https://doi.org/10.1109/tnano.2020.2994640

DC Field	Value
dc.title	Study of Laterally Stacked Nanostructures Using an Organic Semiconducting Channel Fabricated by Trench Isolation Technique
dc.contributor.author	Ghosh, Joydeep
dc.contributor.author	Salvan, Georgeta
dc.contributor.author	Reuter, Danny
dc.date.accessioned	2020-08-19T15:51:12Z
dc.date.available	2020-08-19T15:51:12Z
dc.date.issued	2020
dc.identifier.citation	Ghosh, Joydeep, Salvan, Georgeta, Reuter, Danny (2020). Study of Laterally Stacked Nanostructures Using an Organic Semiconducting Channel Fabricated by Trench Isolation Technique. IEEE Transactions on Nanotechnology : 1-1. ScholarBank@NUS Repository. https://doi.org/10.1109/tnano.2020.2994640
dc.identifier.issn	1536125X
dc.identifier.issn	19410085
dc.identifier.uri	https://scholarbank.nus.edu.sg/handle/10635/173158
dc.publisher	Institute of Electrical and Electronics Engineers (IEEE)
dc.source	Elements
dc.type	Article
dc.date.updated	2020-06-03T02:50:47Z
dc.contributor.department	ELECTRICAL AND COMPUTER ENGINEERING
dc.description.doi	10.1109/tnano.2020.2994640
dc.description.sourcetitle	IEEE Transactions on Nanotechnology
dc.description.page	1-1
dc.published.state	Published
Appears in Collections:	Staff Publications Elements

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