Please use this identifier to cite or link to this item: https://doi.org/10.1002/qute.202070063
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dc.titleBack Cover: Toward Valley‐Coupled Spin Qubits (Adv. Quantum Technol. 6/2020)
dc.contributor.authorGoh, Kuan Eng Johnson
dc.contributor.authorBussolotti, Fabio
dc.contributor.authorLau, Chit Siong
dc.contributor.authorKotekar‐Patil, Dharmraj
dc.contributor.authorOoi, Zi En
dc.contributor.authorChee, Jing Yee
dc.date.accessioned2020-08-06T06:51:01Z
dc.date.available2020-08-06T06:51:01Z
dc.date.issued2020-06
dc.identifier.citationGoh, Kuan Eng Johnson, Bussolotti, Fabio, Lau, Chit Siong, Kotekar‐Patil, Dharmraj, Ooi, Zi En, Chee, Jing Yee (2020-06). Back Cover: Toward Valley‐Coupled Spin Qubits (Adv. Quantum Technol. 6/2020). Advanced Quantum Technologies 3 (6) : 2070063-2070063. ScholarBank@NUS Repository. https://doi.org/10.1002/qute.202070063
dc.identifier.issn25119044
dc.identifier.urihttps://scholarbank.nus.edu.sg/handle/10635/172031
dc.description.abstractThe valley‐coupled spins and strong spin‐orbit interaction in monolayer transition metal dichalcogenides provide the basis for a new type of robust qubits. Experimental progress is targeting electrically formed quantum dots that host such qubits with spins residing in either the K or K' valley depending on their spin directions. In article number 1900123, Kuan Eng Johnson Goh and co‐workers report the progress of this field.
dc.publisherWiley
dc.sourceElements
dc.typeOthers
dc.date.updated2020-08-05T14:20:08Z
dc.contributor.departmentPHYSICS
dc.description.doi10.1002/qute.202070063
dc.description.sourcetitleAdvanced Quantum Technologies
dc.description.volume3
dc.description.issue6
dc.description.page2070063-2070063
dc.published.statePublished
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