Please use this identifier to cite or link to this item:
https://doi.org/10.1016/j.solmat.2019.110077
DC Field | Value | |
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dc.title | Comparative study of different silicon oxides used as interfacial passivation layer (SiNy:H / SiOx /n+-Si) in industrial monocrystalline silicon solar cells | |
dc.contributor.author | Yadav, Tarun Singh | |
dc.contributor.author | Sharma, Ashok Kumar | |
dc.contributor.author | Kottantharayil, Anil | |
dc.contributor.author | PRABIR KANTI BASU | |
dc.date.accessioned | 2020-07-08T04:40:27Z | |
dc.date.available | 2020-07-08T04:40:27Z | |
dc.date.issued | 2019-10-01 | |
dc.identifier.citation | Yadav, Tarun Singh, Sharma, Ashok Kumar, Kottantharayil, Anil, PRABIR KANTI BASU (2019-10-01). Comparative study of different silicon oxides used as interfacial passivation layer (SiNy:H / SiOx /n+-Si) in industrial monocrystalline silicon solar cells. Solar Energy Materials and Solar Cells 201 : 110077-110077. ScholarBank@NUS Repository. https://doi.org/10.1016/j.solmat.2019.110077 | |
dc.identifier.issn | 09270248 | |
dc.identifier.uri | https://scholarbank.nus.edu.sg/handle/10635/170998 | |
dc.description.abstract | Ultrathin silicon oxide (SiOx) is used as a passivating and tunneling layer in high efficiency passivated contact silicon (Si) wafer solar cells. In this work, the emitter surface passivation quality using a low-cost, low-temperature (40 °C), non-acidic and safe chemical oxide passivation process (named as NCPRE-oxide) grown using sodium hypochlorite solution is compared with other existing oxide growth or deposition processes such as dry thermal oxide, Radio Corporation of America standard clean-2 (RCA-2) chemical oxide, nitric acid based oxide, sulphuric acid based (Piranha) oxide, ozone based oxide and deposited oxide by plasma enhanced chemical vapour deposition on standard 6-inch textured Si wafers. All the oxides layers are capped with hydrogenated amorphous silicon nitride (SiNy:H) improve passivation of the n+-type Si surface. There is a substantial improvement in the effective minority carrier lifetime (τeff) for SiOx/SiNy:H stack on the phosphorous diffused pyramidal textured Si surface. Further, to compare the influence of NCPRE-oxide process with other oxide processes on the electrical performance of the final device, these different processes were included in the fabrication of large area industrial aluminum-back surface field (Al-BSF) solar cells. A comprehensive analysis based on ellipsometry for film thickness measurement, τeff measurement, cell current-voltage characteristics, photoluminescence imaging, internal quantum efficiency mapping, and front surface recombination velocity measurement is presented. The NCPRE-oxide process resulted in a similar improvement in passivation and cell efficiency as other oxide processes for Al-BSF cells. In addition, its low-cost, low thermal budget, easy waste disposal, and single-component nature make it viable for industrial scale implementation. | |
dc.publisher | Elsevier BV | |
dc.source | Elements | |
dc.subject | Emitter passivation | |
dc.subject | Ultrathin silicon oxide | |
dc.subject | Chemical and dry oxidation | |
dc.subject | PECVD oxidation | |
dc.subject | Low-cost surface passivation | |
dc.subject | SiOx/SiNy:H passivation | |
dc.type | Article | |
dc.date.updated | 2020-07-07T02:16:02Z | |
dc.contributor.department | SOLAR ENERGY RESEARCH INST OF S'PORE | |
dc.description.doi | 10.1016/j.solmat.2019.110077 | |
dc.description.sourcetitle | Solar Energy Materials and Solar Cells | |
dc.description.volume | 201 | |
dc.description.page | 110077-110077 | |
dc.published.state | Published | |
Appears in Collections: | Staff Publications Elements |
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File | Description | Size | Format | Access Settings | Version | |
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PKB_Final Revised_Manuscript_Silicon_Oxide_Passivation_2019_solmat.pdf | 2.16 MB | Adobe PDF | OPEN | Post-print | View/Download |
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