Please use this identifier to cite or link to this item:
https://doi.org/10.1016/j.solmat.2019.110358
DC Field | Value | |
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dc.title | Development of thin polysilicon layers for application in monoPoly (TM) cells with screen-printed and fired metallization | |
dc.contributor.author | Pradeep Padhamnath | |
dc.contributor.author | Ankit Khanna | |
dc.contributor.author | Naomi Nandakumar | |
dc.contributor.author | Nitin Nampalli | |
dc.contributor.author | Vinodh Shanmugam | |
dc.contributor.author | Armin G. Aberle | |
dc.contributor.author | Shubham Duttagupta | |
dc.date.accessioned | 2020-06-29T08:23:06Z | |
dc.date.available | 2020-06-29T08:23:06Z | |
dc.date.issued | 2020-04-01 | |
dc.identifier.citation | Pradeep Padhamnath, Ankit Khanna, Naomi Nandakumar, Nitin Nampalli, Vinodh Shanmugam, Armin G. Aberle, Shubham Duttagupta (2020-04-01). Development of thin polysilicon layers for application in monoPoly (TM) cells with screen-printed and fired metallization. SOLAR ENERGY MATERIALS AND SOLAR CELLS 207. ScholarBank@NUS Repository. https://doi.org/10.1016/j.solmat.2019.110358 | |
dc.identifier.issn | 09270248 | |
dc.identifier.issn | 18793398 | |
dc.identifier.uri | https://scholarbank.nus.edu.sg/handle/10635/170753 | |
dc.description.abstract | © 2019 Elsevier B.V. Passivating contacts are an important technological innovation for crystalline silicon (c-Si) solar cells that can deliver efficiencies of over 24% in mass production. In this study, we comprehensively analyze n-type bifacial c-Si solar cells with rear side SiOx/phosphorus-doped (n+) poly-Si passivating contacts (monoPoly™ cells) with varying thicknesses (50–250 nm) of the n+ poly-Si layer. The poly-Si layers are deposited by low-pressure chemical vapor deposition (LPCVD) and then phosphorus doped ex-situ in a diffusion furnace. The ex-situ doping is carefully optimized for each individual thickness to achieve a step-function-like doping profile. Excellent passivation properties are achieved with the SiOx/n+ poly-Si stack, with a dark saturation current density of only 1 fA/cm2 for 150 nm n+ poly-Si layers. Metallization is realized by screen printing using commercially available fire-through pastes. Very low dark saturation current densities of <50 fA/cm2 are achieved under the metal contacts for n+ poly-Si thicknesses ≥100 nm. Trade-offs in the cells’ current-voltage (I–V) parameters are analyzed as a function of n+ poly-Si thickness and efficiency limiting factors are identified for cells with 50 nm n+ poly-Si layers. | |
dc.language.iso | en | |
dc.publisher | ELSEVIER | |
dc.source | Elements | |
dc.subject | Passivating contacts | |
dc.subject | Polysilicon | |
dc.subject | Screen-printed | |
dc.subject | Metallization | |
dc.subject | TOPCon | |
dc.subject | monoPoly | |
dc.type | Article | |
dc.date.updated | 2020-06-11T09:18:53Z | |
dc.contributor.department | ELECTRICAL AND COMPUTER ENGINEERING | |
dc.contributor.department | SOLAR ENERGY RESEARCH INST OF S'PORE | |
dc.description.doi | 10.1016/j.solmat.2019.110358 | |
dc.description.sourcetitle | SOLAR ENERGY MATERIALS AND SOLAR CELLS | |
dc.description.volume | 207 | |
dc.published.state | Published | |
dc.description.redeposit | Completed | |
Appears in Collections: | Staff Publications Elements |
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SOLMAT-D-19-01808R1_post print.pdf | Accepted version | 536.97 kB | Adobe PDF | OPEN | Post-print | View/Download |
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