Please use this identifier to cite or link to this item: https://doi.org/10.1109/ISCAS.2014.6865598
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dc.titleHighly Reliable Memory-based Physical Unclonable Function Using Spin-Transfer Torque MRAM
dc.contributor.authorZhang, Le
dc.contributor.authorFong, Xuanyao
dc.contributor.authorChang, Chip-Hong
dc.contributor.authorKong, Zhi Hui
dc.contributor.authorRoy, Kaushik
dc.date.accessioned2019-07-03T04:05:25Z
dc.date.available2019-07-03T04:05:25Z
dc.date.issued2014-01-01
dc.identifier.citationZhang, Le, Fong, Xuanyao, Chang, Chip-Hong, Kong, Zhi Hui, Roy, Kaushik (2014-01-01). Highly Reliable Memory-based Physical Unclonable Function Using Spin-Transfer Torque MRAM. IEEE International Symposium on Circuits and Systems (ISCAS) : 2169-2172. ScholarBank@NUS Repository. https://doi.org/10.1109/ISCAS.2014.6865598
dc.identifier.isbn9781479934324
dc.identifier.issn02714302
dc.identifier.urihttps://scholarbank.nus.edu.sg/handle/10635/156213
dc.description.abstractIn recent years, Physical Unclonable Function (PUF) based on the inimitable and unpredictable disorder of physical devices has emerged to address security issues related to cryptographic key generation. In this paper, a novel memory-based PUF based on Spin-Transfer Torque (STT) Magnetic RAM, named as STT-PUF, is proposed as a key generation primitive for embedded computing systems. By comparing the resistances of STT-MRAM memory cells which are initialized to the same state, response bits can be generated by exploiting the inherent random mismatches between them. To enhance the robustness of response bits regeneration, an Automatic Write-Back (AWB) technique is proposed without compromising the resilience of STT-PUF against possible attacks. Simulations show that the proposed STT-PUF is able to produce raw response bits with uniqueness of 50.1% and entropy of 0.985 bit per cell. The worst-case Bit-Error Rate (BER) under varying operating conditions is 6.6 × 10-6. © 2014 IEEE.
dc.publisherIEEE
dc.sourceElements
dc.subjectScience & Technology
dc.subjectTechnology
dc.subjectEngineering, Electrical & Electronic
dc.subjectEngineering
dc.subjectSTT MRAM
dc.typeConference Paper
dc.date.updated2019-07-03T03:48:29Z
dc.contributor.departmentCENTRE FOR WIRELESS COMMUNICATIONS
dc.contributor.departmentELECTRICAL AND COMPUTER ENGINEERING
dc.description.doi10.1109/ISCAS.2014.6865598
dc.description.sourcetitleIEEE International Symposium on Circuits and Systems (ISCAS)
dc.description.page2169-2172
dc.published.statePublished
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