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Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.5008927
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dc.titleThreshold switching in SiGeAsTeN chalcogenide glass prepared by As ion implantation into sputtered SiGeTeN film
dc.contributor.authorLIU, GUANGYU
dc.contributor.authorWU, LIANGCAI
dc.contributor.authorSONG, ZHITANG
dc.contributor.authorLIU, YAN
dc.contributor.authorLI, TAO
dc.contributor.authorZHANG, SIFAN
dc.contributor.authorSONG, SANNIAN
dc.contributor.authorFENG, SONGLIN
dc.date.accessioned2019-06-04T03:53:23Z
dc.date.available2019-06-04T03:53:23Z
dc.date.issued2017-12-18
dc.identifier.citationLIU, GUANGYU, WU, LIANGCAI, SONG, ZHITANG, LIU, YAN, LI, TAO, ZHANG, SIFAN, SONG, SANNIAN, FENG, SONGLIN (2017-12-18). Threshold switching in SiGeAsTeN chalcogenide glass prepared by As ion implantation into sputtered SiGeTeN film. APPLIED PHYSICS LETTERS 111 (25). ScholarBank@NUS Repository. https://doi.org/10.1063/1.5008927
dc.identifier.issn00036951
dc.identifier.issn10773118
dc.identifier.urihttps://scholarbank.nus.edu.sg/handle/10635/155148
dc.language.isoen
dc.publisherAMER INST PHYSICS
dc.sourceElements
dc.subjectScience & Technology
dc.subjectPhysical Sciences
dc.subjectPhysics, Applied
dc.subjectPhysics
dc.typeArticle
dc.date.updated2019-06-03T06:58:37Z
dc.contributor.departmentCIVIL AND ENVIRONMENTAL ENGINEERING
dc.contributor.departmentNUS NANOSCIENCE & NANOTECH INITIATIVE
dc.contributor.departmentSAW SWEE HOCK SCHOOL OF PUBLIC HEALTH
dc.description.doi10.1063/1.5008927
dc.description.sourcetitleAPPLIED PHYSICS LETTERS
dc.description.volume111
dc.description.issue25
dc.published.statePublished
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