Please use this identifier to cite or link to this item:
https://doi.org/10.1088/0953-8984/28/36/365002
DC Field | Value | |
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dc.title | Electrostatic model of the energy-bending within organic semiconductors: experiment and simulation | |
dc.contributor.author | Whitcher, TJ | |
dc.contributor.author | Wong, WS | |
dc.contributor.author | Talik, AN | |
dc.contributor.author | Woon, KL | |
dc.contributor.author | Chanlek, N | |
dc.contributor.author | Nakajima, H | |
dc.contributor.author | Saisopa, T | |
dc.contributor.author | Songsiriritthigul, P | |
dc.date.accessioned | 2019-06-03T04:44:45Z | |
dc.date.available | 2019-06-03T04:44:45Z | |
dc.date.issued | 2016-09-14 | |
dc.identifier.citation | Whitcher, TJ, Wong, WS, Talik, AN, Woon, KL, Chanlek, N, Nakajima, H, Saisopa, T, Songsiriritthigul, P (2016-09-14). Electrostatic model of the energy-bending within organic semiconductors: experiment and simulation. Journal of Physics: Condensed Matter 28 (36) : 365002-365002. ScholarBank@NUS Repository. https://doi.org/10.1088/0953-8984/28/36/365002 | |
dc.identifier.issn | 09538984 | |
dc.identifier.issn | 1361648X | |
dc.identifier.uri | https://scholarbank.nus.edu.sg/handle/10635/155060 | |
dc.publisher | IOP Publishing | |
dc.rights | Attribution-NonCommercial-NoDerivatives 4.0 International | |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/4.0/ | |
dc.source | Elements | |
dc.type | Article | |
dc.date.updated | 2019-06-03T02:01:56Z | |
dc.contributor.department | CENTRE FOR ADVANCED 2D MATERIALS | |
dc.description.doi | 10.1088/0953-8984/28/36/365002 | |
dc.description.sourcetitle | Journal of Physics: Condensed Matter | |
dc.description.volume | 28 | |
dc.description.issue | 36 | |
dc.description.page | 365002-365002 | |
dc.published.state | Published | |
Appears in Collections: | Staff Publications Elements |
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Electrostatic model of the energy-bending within organic semiconductors: experiment and simulation.pdf | Published version | 1.8 MB | Adobe PDF | CLOSED | None |
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