Please use this identifier to cite or link to this item: https://doi.org/10.1088/0953-8984/28/36/365002
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dc.titleElectrostatic model of the energy-bending within organic semiconductors: experiment and simulation
dc.contributor.authorWhitcher, TJ
dc.contributor.authorWong, WS
dc.contributor.authorTalik, AN
dc.contributor.authorWoon, KL
dc.contributor.authorChanlek, N
dc.contributor.authorNakajima, H
dc.contributor.authorSaisopa, T
dc.contributor.authorSongsiriritthigul, P
dc.date.accessioned2019-06-03T04:44:45Z
dc.date.available2019-06-03T04:44:45Z
dc.date.issued2016-09-14
dc.identifier.citationWhitcher, TJ, Wong, WS, Talik, AN, Woon, KL, Chanlek, N, Nakajima, H, Saisopa, T, Songsiriritthigul, P (2016-09-14). Electrostatic model of the energy-bending within organic semiconductors: experiment and simulation. Journal of Physics: Condensed Matter 28 (36) : 365002-365002. ScholarBank@NUS Repository. https://doi.org/10.1088/0953-8984/28/36/365002
dc.identifier.issn09538984
dc.identifier.issn1361648X
dc.identifier.urihttps://scholarbank.nus.edu.sg/handle/10635/155060
dc.publisherIOP Publishing
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 International
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/
dc.sourceElements
dc.typeArticle
dc.date.updated2019-06-03T02:01:56Z
dc.contributor.departmentCENTRE FOR ADVANCED 2D MATERIALS
dc.description.doi10.1088/0953-8984/28/36/365002
dc.description.sourcetitleJournal of Physics: Condensed Matter
dc.description.volume28
dc.description.issue36
dc.description.page365002-365002
dc.published.statePublished
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