BANDGAP ENGINEERING OF QUANTM DOT STRUCTURES BY LASER ANNEALING

Abstract

The ability to control local optical and electrical characteristics of quantum dots system is fundamental important for photonic integrated circuits (PICs). In investigations to this aim, Quantum Dot intermixing (QDI) is one of the promising ways to solve this problem. The advantages of offering direct writing capability and potential high spatial resolution attract more and more researchers. In this thesis, the significant modification of the band gap energy of the InAs/InP quantum dot (QD) structure using rapid thermal processor (RTP) and laser annealing techniques has been reported. The relation between PL intensity and the shift of wavelength is built when defect density is low enough. An analytical model for qualitative understanding the relation between wavelength change and intensity was developed.